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Efficient Si Nanowire Array Transfer via Bi‐Layer Structure Formation Through Metal‐Assisted Chemical Etching

dc.contributor.authorMoon, Taehoen_US
dc.contributor.authorChen, Linen_US
dc.contributor.authorChoi, Shinhyunen_US
dc.contributor.authorKim, Chunjoongen_US
dc.contributor.authorLu, Weien_US
dc.date.accessioned2014-05-21T18:02:52Z
dc.date.availableWITHHELD_13_MONTHSen_US
dc.date.available2014-05-21T18:02:52Z
dc.date.issued2014-04en_US
dc.identifier.citationMoon, Taeho; Chen, Lin; Choi, Shinhyun; Kim, Chunjoong; Lu, Wei (2014). "Efficient Si Nanowire Array Transfer via Bi‐Layer Structure Formation Through Metal‐Assisted Chemical Etching." Advanced Functional Materials 24(13): 1949-1955.en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.issn1616-3028en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/106706
dc.publisherWiley Periodicals, Inc.en_US
dc.subject.otherThin‐Film Transistoren_US
dc.subject.otherMetal‐Assisted Chemical Etchingen_US
dc.subject.otherSi Nanowireen_US
dc.subject.otherFlexible Electronicsen_US
dc.subject.otherNanowire Transferen_US
dc.titleEfficient Si Nanowire Array Transfer via Bi‐Layer Structure Formation Through Metal‐Assisted Chemical Etchingen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelEngineering (General)en_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/106706/1/adfm201303180.pdf
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/106706/2/adfm201303180-sup-0001-S1.pdf
dc.identifier.doi10.1002/adfm.201303180en_US
dc.identifier.sourceAdvanced Functional Materialsen_US
dc.identifier.citedreferenceZ. Fan, J. C. Ho, Z. A. Jacobson, R. Yerushalmi, R. L. Alley, H. Razavi, A. Javei, Nano Lett. 2008, 8, 20.en_US
dc.identifier.citedreferenceY. Cui, Q. Wei, H. Park, C. M. Lieber, Science 2001, 293, 1289.en_US
dc.identifier.citedreferenceA. J. Baca, M. A. Meitl, H. C. Ko, S. Mack, H.‐S. Kim, J. Dong, P. M. Ferreira, J. A. Rogers, Adv. Funct. Mater. 2007, 17, 3051.en_US
dc.identifier.citedreferenceS. Mack, M. A. Meitl, A. J. Baca, Z.‐T. Zhu, J. A. Rogers, Appl. Phys. Lett. 2006, 88, 213101.en_US
dc.identifier.citedreferenceZ. Huang, N. Geyer, P. Werner, J. Boor, U. Gösele, Adv. Mater. 2011, 23, 285.en_US
dc.identifier.citedreferenceA. I. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett, M. Najarian, A. Majumdar, P. Yang, Nature 2008, 451, 163.en_US
dc.identifier.citedreferenceE. C. Garnett, P. Yang, J. Am. Chem. Soc. 2008, 130, 9224.en_US
dc.identifier.citedreferenceZ. Huang, T. Shimizu, S. Senz, Z. Zhang, X. Zhang, W. Lee, N. Geyer, U. Gösele, Nano Lett. 2009, 9, 2519.en_US
dc.identifier.citedreferenceX. Zhong, Y. Qu, Y.‐C. Lin, L. Liao, X. Duan, ACS Appl. Mater. Interfaces 2011, 3, 261.en_US
dc.identifier.citedreferenceM.‐L. Zhang, K.‐Q. Peng, X. Fan, J.‐S. Jie, R.‐Q. Zhang, S.‐T. Lee, N.‐B. Wong, J. Phys. Chem. C 2008, 112, 4444.en_US
dc.identifier.citedreferenceZ. Huang, X. Zhang, M. Reiche, L. Liu, W. Lee, T. Shimizu, S. Senz, U. Gösele, Nano Lett. 2008, 8, 3046.en_US
dc.identifier.citedreferenceN. Geyer, Z. Huang, B. Fuhrmann, S. Grimm, M. Reiche, T.‐K. Nguyen‐Duc, J. Boor, H. S. Leipner, P. Werner, U. Gösele, Nano Lett. 2009, 9, 3106.en_US
dc.identifier.citedreferenceS. Chang, V. P. Chuang, S. T. Boles, C. V. Thompson, Adv. Funct. Mater. 2010, 20, 4364.en_US
dc.identifier.citedreferenceB. Mikhael, B. Elise, M. Xavier, S. Sebastian, M. Johann, P. Laetitia, ACS Appl. Mater. Interfaces 2011, 3, 3866.en_US
dc.identifier.citedreferenceS. W. Schmitt, F. Schechtel, D. Amkreutz, M. Bashouti, S. Srivastava, B. Hoffmann, C. Dieker, E. Spiecker, B. Rech, S. Christiansen, Nano Lett. 2012, 12, 4050.en_US
dc.identifier.citedreferenceA. Javey, S. Nam, R. S. Friedman, H. Yan, C. M. Lieber, Nano Lett. 2007, 7, 773.en_US
dc.identifier.citedreferenceJ. M. Weisse, D. R. Kim, C. H. Lee, X. Zheng, Nano Lett. 2011, 11, 1300.en_US
dc.identifier.citedreferenceJ. Kim, H. Rhu, W. Lee, J. Mater. Chem. 2011, 21, 15889.en_US
dc.identifier.citedreferenceJ. Kim, H. Han, Y. H. Kim, S.‐H. Choi, J.‐C. Kim, W. Lee, ACS Nano 2011, 5, 3222.en_US
dc.identifier.citedreferenceH. Han, J. Kim, H. S. Shin, J. Y. Song, W. Lee, Adv. Mater. 2012, 24, 2284.en_US
dc.identifier.citedreferenceN. Geyer, B. Fuhrmann, Z. Huang, J. Boor, H. S. Leipner, P. Werner, J. Phys. Chem. C 2012, 116, 13446.en_US
dc.identifier.citedreferenceE. N. Dattoli, Q. Wan, W. Guo, Y. Chen, X. Pan, W. Lu, Nano Lett. 2007, 7, 2463.en_US
dc.identifier.citedreferenceS. Kalem, P. Werner, B. Nilsson, V. G. Talalaev, M. Hagberg, Ö. Arthursson, U. Södervall, Nanotechnology 2009, 20, 445303.en_US
dc.identifier.citedreferenceY. Cui, C. M. Lieber, Science 2001, 291, 851.en_US
dc.identifier.citedreferenceX. Duan, Y. Huang, R. Agarwal, C. M. Lieber, Nature 2003, 421, 241.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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