High‐Performance Pseudocubic Thermoelectric Materials from Non‐cubic Chalcopyrite Compounds

Zhang, Jiawei; Liu, Ruiheng; Cheng, Nian; Zhang, Yubo; Yang, Jihui; Uher, Ctirad; Shi, Xun; Chen, Lidong; Zhang, Wenqing

High‐Performance Pseudocubic Thermoelectric Materials from Non‐cubic Chalcopyrite Compounds

dc.contributor.author	Zhang, Jiawei	en_US
dc.contributor.author	Liu, Ruiheng	en_US
dc.contributor.author	Cheng, Nian	en_US
dc.contributor.author	Zhang, Yubo	en_US
dc.contributor.author	Yang, Jihui	en_US
dc.contributor.author	Uher, Ctirad	en_US
dc.contributor.author	Shi, Xun	en_US
dc.contributor.author	Chen, Lidong	en_US
dc.contributor.author	Zhang, Wenqing	en_US
dc.date.accessioned	2014-07-03T14:41:40Z
dc.date.available	WITHHELD_12_MONTHS	en_US
dc.date.available	2014-07-03T14:41:40Z
dc.date.issued	2014-06	en_US
dc.identifier.citation	Zhang, Jiawei; Liu, Ruiheng; Cheng, Nian; Zhang, Yubo; Yang, Jihui; Uher, Ctirad; Shi, Xun; Chen, Lidong; Zhang, Wenqing (2014). "High‐Performance Pseudocubic Thermoelectric Materials from Non‐cubic Chalcopyrite Compounds." Advanced Materials 26(23): 3848-3853.	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.issn	1521-4095	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/107585
dc.publisher	Wiley Periodicals, Inc.	en_US
dc.publisher	Springer Verlag	en_US
dc.subject.other	Pseudocubic Structures	en_US
dc.subject.other	Non‐Cubic Compounds	en_US
dc.subject.other	Thermoelectrics	en_US
dc.subject.other	Degenerate Electronic Bands	en_US
dc.title	High‐Performance Pseudocubic Thermoelectric Materials from Non‐cubic Chalcopyrite Compounds	en_US
dc.type	Article	en_US
dc.rights.robots	IndexNoFollow	en_US
dc.subject.hlbsecondlevel	Materials Science and Engineering	en_US
dc.subject.hlbsecondlevel	Engineering (General)	en_US
dc.subject.hlbtoplevel	Engineering	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/107585/1/adma201400058-sup-0001-S1.pdf
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/107585/2/adma201400058.pdf
dc.identifier.doi	10.1002/adma.201400058	en_US
dc.identifier.source	Advanced Materials	en_US
dc.identifier.citedreference	Y. Li, Q. Meng, Y. Deng, H. Zhou, Y. Gao, Y. Li, J. Yang, J. Cui, Appl. Phys. Lett. 2012, 100, 231903.	en_US
dc.identifier.citedreference	K. Biswas, J. He, I. D. Blum, C.‐I. Wu, T. P. Hogan, D. N. Seidman, V. P. Dravid, M. G. Kanatzidis, Nature 2012, 489, 414.	en_US
dc.identifier.citedreference	K. F. Hsu, S. Loo, F. Guo, W. Chen, J. S. Dyck, C. Uher, T. Hogan, E. K. Polychroniadis, M. G. Kanatzidis, Science 2004, 303, 818.	en_US
dc.identifier.citedreference	K. Biswas, J. He, Q. Zhang, G. Wang, C. Uher, V. P. Dravid, M. G. Kanatzidis, Nat. Chem. 2011, 3, 160.	en_US
dc.identifier.citedreference	C. Uher, J. Yang, S. Hu, D. T. Morelli, G. P. Meisner, Phys. Rev. B 1999, 59, 8615.	en_US
dc.identifier.citedreference	V. K. Zaitsev, M. I. Fedorov, E. A. Gurieva, I. S. Eremin, P. P. Konstantinov, A. Y. Samunin, M. V. Vedernikov, Phys. Rev. B 2006, 74, 045207.	en_US
dc.identifier.citedreference	T. Plirdpring, K. Kurosaki, A. Kosuga, T. Day, S. Firdosy, V. Ravi, G. J. Snyder, A. Harnwunggmoung, T. Sugahara, Y. Ohishi, H. Muta, S. Yamanaka, Adv. Mater. 2012, 24, 3622.	en_US
dc.identifier.citedreference	M. Ibanez, R. Zamani, A. LaLonde, D. Cadavid, W. Li, A. Shavel, J. Arbiol, J. R. Morante, S. Gorsse, G. J. Snyder, A. Cabot, J. Am. Chem. Soc. 2012, 134, 4060.	en_US
dc.identifier.citedreference	A. Kosuga, T. Plirdpring, R. Higashine, M. Matsuzawa, K. Kurosaki, S. Yamanaka, Appl. Phys. Lett. 2012, 100, 042108.	en_US
dc.identifier.citedreference	R. Liu, L. Xi, H. Liu, X. Shi, W. Zhang, L. Chen, Chem. Commun. 2012, 48, 3818.	en_US
dc.identifier.citedreference	P. Z. Ying, H. Zhou, Y. L. Gao, Y. Y. Li, Y. P. Li, X. L. Lian, J. L. Cui, Key Eng. Mater. 2012, 519, 188.	en_US
dc.identifier.citedreference	A. Yusufu, K. Kurosaki, A. Kosuga, T. Sugahara, Y. Ohishi, H. Muta, S. Yamanaka, Appl. Phys. Lett. 2011, 99, 061902.	en_US
dc.identifier.citedreference	X. Y. Shi, F. Q. Huang, M. L. Liu, L. D. Chen, Appl. Phys. Lett. 2009, 94, 122103.	en_US
dc.identifier.citedreference	M. L. Liu, F. Q. Huang, L. D. Chen, I. W. Chen, Appl. Phys. Lett. 2009, 94, 202103.	en_US
dc.identifier.citedreference	J. Rowe, J. Shay, Phys. Rev. B 1971, 3, 451.	en_US
dc.identifier.citedreference	L. Artus, Y. Bertrand, C. Ance, J. Phys. C: Solid State Phys. 1986, 19, 5937.	en_US
dc.identifier.citedreference	W. Liu, X. Tan, K. Yin, H. Liu, X. Tang, J. Shi, Q. Zhang, C. Uher, Phys. Rev. Lett. 2012, 108, 166601.	en_US
dc.identifier.citedreference	X. Liu, T. Zhu, H. Wang, L. Hu, H. Xie, G. Jiang, G. J. Snyder, X. Zhao, Adv. Energy Mater. 2013, 3, 1238.	en_US
dc.identifier.citedreference	J. Martins, A. Zunger, Phys. Rev. B 1985, 32, 2689.	en_US
dc.identifier.citedreference	J. Jaffe, A. Zunger, Phys. Rev. B 1984, 29, 1882.	en_US
dc.identifier.citedreference	J. L. Shay, J. H. Wernick, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications, Pergamon, Oxford, UK, 1975.	en_US
dc.identifier.citedreference	J. J. Hopfield, J. Phys. Chem. Solids 1960, 15, 97.	en_US
dc.identifier.citedreference	Y. Pei, H. Wang, G. J. Snyder, Adv. Mater. 2012, 24, 6125.	en_US
dc.identifier.citedreference	P. E. Blöchl, Phys. Rev. B 1994, 50, 17953.	en_US
dc.identifier.citedreference	G. Kresse, J. Furthmüller, Phys. Rev. B 1996, 54, 11169.	en_US
dc.identifier.citedreference	J. Paier, M. Marsman, K. Hummer, G. Kresse, I. C. Gerber, J. G. Angyan, J. Chem. Phys. 2006, 124, 154709.	en_US
dc.identifier.citedreference	Y. Zhang, X. Yuan, X. Sun, B.‐C. Shih, P. Zhang, W. Zhang, Phys. Rev. B 2011, 84, 075127.	en_US
dc.identifier.citedreference	Y. Zhang, J. Zhang, W. Gao, T. A. Abtew, Y. Wang, P. Zhang, W. Zhang, J. Chem. Phys. 2013, 139, 184706.	en_US
dc.identifier.citedreference	J. Yang, H.‐L. Yip, A. K. Y. Jen, Adv. Energy Mater. 2013, 3, 549.	en_US
dc.identifier.citedreference	G. J. Snyder, E. S. Toberer, Nat. Mater. 2008, 7, 105.	en_US
dc.identifier.citedreference	G. S. Nolas, J. Sharp, H. J. Goldsmid, in Thermoelectrics: Basic Principles and New Materials Developments, (Eds: A. Zunger, R. M. Osgood Jr., R. Hull, H. Sakaki ), Springer Verlag, New York 2001, Ch. 3.	en_US
dc.identifier.citedreference	Y. Pei, X. Shi, A. LaLonde, H. Wang, L. Chen, G. J. Snyder, Nature 2011, 473, 66.	en_US
dc.identifier.citedreference	H. L. Liu, X. Shi, F. F. Xu, L. L. Zhang, W. Q. Zhang, L. D. Chen, Q. Li, C. Uher, T. Day, G. J. Snyder, Nat. Mater. 2012, 11, 422.	en_US
dc.identifier.citedreference	A. I. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett, M. Najarian, A. Majumdar, P. Yang, Nature 2008, 451, 163.	en_US
dc.identifier.citedreference	J. P. Heremans, V. Jovovic, E. S. Toberer, A. Saramat, K. Kurosaki, A. Charoenphakdee, S. Yamanaka, G. J. Snyder, Science 2008, 321, 554.	en_US
dc.identifier.citedreference	B. C. Sales, D. Mandrus, R. K. Williams, Science 1996, 272, 1325.	en_US
dc.owningcollname	Interdisciplinary and Peer-Reviewed

Files in this item

Name:: adma201400058-sup-0001-S1.pdf
Size:: 361.3KB
Format:: PDF

View/Open

Name:: adma201400058.pdf
Size:: 1.194MB
Format:: PDF

View/Open

Interdisciplinary and Peer-Reviewed

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.