Power limitations in BARITT devices

Abstract

The results of a large-signal numerical simulation of the BARITT device using a single-carrier model are given to illustrate the basic transport mechanisms involved in the device. The results of existing first-order small- and large-signal analyses are compared with those computed numerically. Space-charge-limited thermionic injection, spatial velocity modulation, carrier diffusion, premature carrier collection, large-signal electric field depression and the low-field drift region are found to account for the large reduction of power and efficiency of the BARITT device. The maximum power and efficiency of Si uniformly doped and Read structures are found to be approximately 300 W/cm2 and 3%, respectively. The effects of doping profile and material parameters are found to involve a trade off of large-signal handling capability and frequency of operation on one hand vs the negative conductance and thus the Q factor of BARITT devices on the other hand. The excessively high electron mobility in GaAs is found to be detrimental to device operation.