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A method for the mass production of ICF targets

dc.contributor.authorWise, K. D. (Kensall D.)en_US
dc.contributor.authorJackson, T. N.en_US
dc.contributor.authorMasnari, Nino Antonioen_US
dc.contributor.authorRobinson, M. G.en_US
dc.contributor.authorSolomon, D. E.en_US
dc.contributor.authorWuttke, G. H.en_US
dc.contributor.authorRensel, W. B.en_US
dc.date.accessioned2006-04-07T17:31:04Z
dc.date.available2006-04-07T17:31:04Z
dc.date.issued1979-12-02en_US
dc.identifier.citationWise, K. D., Jackson, T. N., Masnari, N. A., Robinson, M. G., Solomon, D. E., Wuttke, G. H., Rensel, W. B. (1979/12/02)."A method for the mass production of ICF targets." Journal of Nuclear Materials 85-86(Part 1): 103-106. <http://hdl.handle.net/2027.42/23443>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TXN-4804W1K-MX/2/fd1e1cf94282f9a9a5076028f45d71d9en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/23443
dc.description.abstractThe application of semiconductor process technology to the manufacture of inertial-confinement fusion targets is described. The use of optical and electron-beam lithography together with silicon etching technology allows the reproducible fabrication of a variety of target configurations for research and may provide a means for the high-volume production of low-cost targets for commercial reactor systems.en_US
dc.format.extent494233 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleA method for the mass production of ICF targetsen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelNuclear Engineering and Radiological Sciencesen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumElectron Physics Laboratory** Department of Electrical and Computer Engineering The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumElectron Physics Laboratory** Department of Electrical and Computer Engineering The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumElectron Physics Laboratory** Department of Electrical and Computer Engineering The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationumElectron Physics Laboratory** Department of Electrical and Computer Engineering The University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationotherKMS Fusion, Inc., Ann Arbor, MI 48106, USAen_US
dc.contributor.affiliationotherKMS Fusion, Inc., Ann Arbor, MI 48106, USAen_US
dc.contributor.affiliationotherKMS Fusion, Inc., Ann Arbor, MI 48106, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/23443/1/0000393.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0022-3115(79)90475-6en_US
dc.identifier.sourceJournal of Nuclear Materialsen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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