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A classification scheme for visual defects arising in semiconductor wafer inspection

dc.contributor.authorRavishankar Rao, A.en_US
dc.contributor.authorJain, Ramesh C.en_US
dc.date.accessioned2006-04-10T13:42:13Z
dc.date.available2006-04-10T13:42:13Z
dc.date.issued1990-06-02en_US
dc.identifier.citationRavishankar Rao, A., Jain, Ramesh (1990/06/02)."A classification scheme for visual defects arising in semiconductor wafer inspection." Journal of Crystal Growth 103(1-4): 398-406. <http://hdl.handle.net/2027.42/28525>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TJ6-46D27VS-CF/2/83d5474dbce7ebcd3205922b8bb09893en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/28525
dc.description.abstractIn this paper we describe a novel scheme to characterize surface defects and flaws that arise in semiconductor wafer processing. This is done by analyzing the texture of an image of the defect. We have developed a taxonomy for textures, which classifies textures into the broad classes of disordered, strongly ordered and weakly ordered. Disordered textures are described in terms of their fractal dimension, strongly ordered textures are by the placement of primitives, and weakly ordered textures by the underlying orientation field. We have developed an algorithm to measure the fractal dimension of a given texture. We use the qualitative theory of differential equations to devise a symbol set for the weakly ordered textures in terms of singularities. We have devised an algorithm to process an image of a defect and extract qualitative descriptions based on this theory.en_US
dc.format.extent1252155 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleA classification scheme for visual defects arising in semiconductor wafer inspectionen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelMathematicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumArtificial Intelligence Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2110, USAen_US
dc.contributor.affiliationotherIBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598-0704, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/28525/1/0000322.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0022-0248(90)90217-9en_US
dc.identifier.sourceJournal of Crystal Growthen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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