Integrated quantum well bipolar devices for tunable detection and optical logic applications
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.contributor.author | Goswami, Subrata | en_US |
dc.contributor.author | Li, Wei-Qi | en_US |
dc.date.accessioned | 2006-04-10T14:34:28Z | |
dc.date.available | 2006-04-10T14:34:28Z | |
dc.date.issued | 1991-10 | en_US |
dc.identifier.citation | Bhattacharya, P., Singh, J., Goswami, S., Li, W-Q. (1991/10)."Integrated quantum well bipolar devices for tunable detection and optical logic applications." Microelectronic Engineering 15(1-4): 585-592. <http://hdl.handle.net/2027.42/29113> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6V0W-46K4P6J-87/2/abe901788934c2eac6656be58e4fe397 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/29113 | |
dc.description.abstract | The properties of exciton-based quantum well devices suitable for low-power photonic switching and logic applications and wavelength selective detection will be described. The basic device is a heterojunction bipolar transistor with MQW collector region monolithically integrated with a p-i(MQW)-n modulator, realized by single-step epitaxy. The integrated controller-modulator device, by virtue of its unique photocurrent-voltage characteristics, exhibits integrating-thresholding properties. These properties have been exploited to demonstrate cascadability, fan-out, optoelectronic amplification, special logic functions, programmable optical/electronic memory capabilities, and wavelength selective detection with GaAs/AlGaAs heterostructure devices. | en_US |
dc.format.extent | 340519 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Integrated quantum well bipolar devices for tunable detection and optical logic applications | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/29113/1/0000151.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0167-9317(91)90290-T | en_US |
dc.identifier.source | Microelectronic Engineering | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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