Bulk GaAs room temperature radiation detectors

McGregor, Douglas S.; Knoll, Glenn F.; Eisen, Yosef; Brake, Richard

1992-11-15

Citation: McGregor, Douglas S., Knoll, Glenn F., Eisen, Yosef, Brake, Richard (1992/11/15)."Bulk GaAs room temperature radiation detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 322(3): 487-492. <http://hdl.handle.net/2027.42/29727>

Abstract: Bulk GaAs, a wide band gap semiconductor, shows potential as a room temperature radiation detector. Schottky diode detectors were fabricated from LEC bulk GaAs crystals. The basic construction of these diodes employed the use of a Ti/Au Schottky contact and a Au/Ge/Ni alloyed ohmic contact. Pulse height characteristics of these diodes indicate active regions of more than 100 [mu]m. Pulse height spectra were recorded from alpha particle irradiation of the Schottky contact surface resulting in a best energy resolution of 2.5% at 5.5 MeV. Low energy gamma rays measured under room temperature operating conditions resulted in photopeaks with 37% FWHM at 60 keV.

DOIs: http://dx.doi.org/10.1016/0168-9002(92)91219-Y

URI: http://www.sciencedirect.com/science/article/B6TJM-4743591-7F/2/ed7dc9e15ed3ea302af51a8dad4fe436

Handle: http://hdl.handle.net/2027.42/29727

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