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Optoelectronic applications of LTMBE III-V materials

dc.contributor.authorWhitaker, John F.en_US
dc.date.accessioned2006-04-10T15:28:05Z
dc.date.available2006-04-10T15:28:05Z
dc.date.issued1993-12-20en_US
dc.identifier.citationWhitaker, John F. (1993/12/20)."Optoelectronic applications of LTMBE III-V materials." Materials Science and Engineering B 22(1): 61-67. <http://hdl.handle.net/2027.42/30388>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TXF-4808V29-H/2/01c879ba80c37feaebd5c535169a24a8en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/30388
dc.description.abstractA review of the application of semiconductor layers grown at low substrate temperatures to ultrafast optoelectronics is presented. The films, grown by molecular beam epitaxy primarily around 200 [deg]C and subsequently annealed, are demonstrated to have high resistivity, high mobility, an ultrashort carrier lifetime, and a high dielectric breakdown. This combination of properties makes the low-temperature-grown materials perfectly suited for use in high-speed optoelectronic devices. A number of issues which influence the application of these materials, such as growth temperature, use of an annealing process, layer thickness, and optical wavelength, are considered. Examples of low-temperature-grown semiconductor optoelectronic devices, including ultra-high-bandwidth photoconductive detectors, high-sensitivity, high-bandwidth MSM photodetectors, and optical temporal analyzers are demonstrated. While the discussion concentrates on low-temperature-grown GaAs, the lattice-mismatched ternary compound InxGa1-xAs/GaAs is also considered in the context of detection of the longer wavelengths used in optical communications.en_US
dc.format.extent678944 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleOptoelectronic applications of LTMBE III-V materialsen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbsecondlevelEngineering (General)en_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for Ultrafast Optical Science, University of Michigan, 2200 Bonisteel Blvd, Rm. 1006, Ann Arbor, MI 48109-2099, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/30388/1/0000006.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0921-5107(93)90224-Ben_US
dc.identifier.sourceMaterials Science and Engineering Ben_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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