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Effect of gas composition on Si 2 N 2 O formation in the Si-C-N-O system

dc.contributor.authorWada, Harueen_US
dc.date.accessioned2006-09-11T15:09:45Z
dc.date.available2006-09-11T15:09:45Z
dc.date.issued1991-05en_US
dc.identifier.citationWada, Harue; (1991). "Effect of gas composition on Si 2 N 2 O formation in the Si-C-N-O system." Journal of Materials Science 26(10): 2590-2594. <http://hdl.handle.net/2027.42/44699>en_US
dc.identifier.issn0022-2461en_US
dc.identifier.issn1573-4803en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/44699
dc.description.abstractFormation of silicon oxynitride was observed during silicon nitride whisker synthesis from silica, carbon and nitrogen. The silicon oxynitride formation was limited to a bottom area of the charged powders and found both in whisker and powder. The possible reason for this localized Si 2 N 2 O formation is analysed, based on the effect of gas phase composition on the phase stability among β-Si 3 N 4 , β-SiC and Si 2 N 2 O. The phase stability is closely related to the ratio in the gas phase. To suppress Si 2 N 2 O formation, the ratio must be lower than that of the phase boundary in the Si 2 N 4 /Si 2 N 2 O equilibrium, whereas it must be higher than that of the phase boundary in the SiC/Si 2 N 2 O equilibrium. The formation of silicon oxynitride during silicon nitride whisker formation was caused most likely by fluctuation in the ratio in the gas phase surrounding the lower area.en_US
dc.format.extent424963 bytes
dc.format.extent3115 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherKluwer Academic Publishers; Chapman and Hall Ltd. ; Springer Science+Business Mediaen_US
dc.subject.otherCrystallographyen_US
dc.subject.otherPolymer Sciencesen_US
dc.subject.otherChemistryen_US
dc.subject.otherMaterials Scienceen_US
dc.subject.otherCharacterization and Evaluation Materialsen_US
dc.subject.otherMechanicsen_US
dc.subject.otherContinuum Mechanics and Mechanics of Materialsen_US
dc.titleEffect of gas composition on Si 2 N 2 O formation in the Si-C-N-O systemen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbsecondlevelEngineering (General)en_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, The University of Michigan, 48109, Ann Arbor, Michigan, USAen_US
dc.contributor.affiliationumcampusAnn Arboren_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/44699/1/10853_2004_Article_BF02387722.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1007/BF02387722en_US
dc.identifier.sourceJournal of Materials Scienceen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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