Real-Time Measurement of Thin Film Thickness During Plasma Processing
dc.contributor.author | Breun, R. | en_US |
dc.contributor.author | Sarfaty, M. | en_US |
dc.contributor.author | Baum, C. | en_US |
dc.contributor.author | Hershkowitz, N. | en_US |
dc.contributor.author | Nagpal, K. | en_US |
dc.contributor.author | Vincent, T. L. | en_US |
dc.contributor.author | Khargonekar, Pramod P. | en_US |
dc.contributor.author | Shohet, J. L. | en_US |
dc.date.accessioned | 2006-09-11T16:05:16Z | |
dc.date.available | 2006-09-11T16:05:16Z | |
dc.date.issued | 1997-12 | en_US |
dc.identifier.citation | Sarfaty, M.; Baum, C.; Breun, R.; Hershkowitz, N.; Shohet, J. L.; Nagpal, K.; Vincent, T. L.; Khargonekar, P. P.; (1997). "Real-Time Measurement of Thin Film Thickness During Plasma Processing." Plasmas and Polymers 2(4): 229-244. <http://hdl.handle.net/2027.42/45461> | en_US |
dc.identifier.issn | 1084-0184 | en_US |
dc.identifier.issn | 1572-8978 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/45461 | |
dc.description.abstract | An in situ single point two-color laser interferometer is used to monitor in real-time the thickness of thin transparent films during processing. The instantaneous change of film thickness is determined by comparing the measured laser reflection interference to that calculated by a model. The etch or deposition rates of the film are determined within 1–2 seconds. The film thickness is also determined in real-time from the phase difference of the reflected laser intensity between the two laser colors. Use of two-color laser interferometry improves the accuracy of the calculated etch or growth rates of the film considerably. Moreover, the two colors provide a clear distinction between film etching and deposition, which may often occur during the same process, and can not be determined by a single color interferometer. The uniformity of the film's etch or deposition rates across the substrate is monitored by an in situ full-wafer image interferometer. The combined use of these two sensors provide instantaneous information of the film thickness, etch or growth rates, as well as time averaged uniformity of the process rates. This diagnostic setup is very useful for process development and monitoring, which is also suitable for manufacturing environment, and can be used for real-time process control. | en_US |
dc.format.extent | 987338 bytes | |
dc.format.extent | 3115 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Kluwer Academic Publishers-Plenum Publishers; Plenum Publishing Corporation ; Springer Science+Business Media | en_US |
dc.subject.other | Real-time Monitoring | en_US |
dc.subject.other | Film Thickness | en_US |
dc.subject.other | Mechanical Engineering | en_US |
dc.subject.other | Full Wafer Imaging Interferometer | en_US |
dc.subject.other | Inorganic Chemistry | en_US |
dc.subject.other | Mechanics | en_US |
dc.subject.other | Physics | en_US |
dc.subject.other | Characterization and Evaluation Materials | en_US |
dc.subject.other | Nuclear Physics, Heavy Ions, Hadrons | en_US |
dc.subject.other | Laser Interferometer | en_US |
dc.subject.other | Film Etching and Deposition Rates | en_US |
dc.subject.other | Film Uniformity | en_US |
dc.title | Real-Time Measurement of Thin Film Thickness During Plasma Processing | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Materials Science and Engineering | en_US |
dc.subject.hlbsecondlevel | Chemistry | en_US |
dc.subject.hlbsecondlevel | Chemical Engineering | en_US |
dc.subject.hlbsecondlevel | Biological Chemistry | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.subject.hlbtoplevel | Health Sciences | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 48109 | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 48109 | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 48109 | en_US |
dc.contributor.affiliationother | Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, Madison, Wisconsin, 53706 | en_US |
dc.contributor.affiliationother | Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, Madison, Wisconsin, 53706 | en_US |
dc.contributor.affiliationother | Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, Madison, Wisconsin, 53706 | en_US |
dc.contributor.affiliationother | Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, Madison, Wisconsin, 53706 | en_US |
dc.contributor.affiliationother | Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, Madison, Wisconsin, 53706 | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/45461/1/11088_2004_Article_412642.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1023/A:1021830100153 | en_US |
dc.identifier.source | Plasmas and Polymers | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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