The tailoring of impact ionization phenomenon using pseudomorphic structures-applications to InGaAlAs on GaAs and InP substrates

Singh, Jasprit

1992-03-01

Citation: Singh, J (1992). "The tailoring of impact ionization phenomenon using pseudomorphic structures-applications to InGaAlAs on GaAs and InP substrates." Semiconductor Science and Technology. 7(3B): B509-B511. <http://hdl.handle.net/2027.42/48930>

Abstract: The potential of utilizing strain for suppressing impact ionization is evaluated. It is found that if compressive strain is introduced without altering the bandgap (e.g. by using properly tailored InGaAlAs alloys) the threshold energy for electron impact ionization is significantly increased for both GaAs-based and InP-based materials.

ISSN: 0268-1242

DOIs: http://dx.doi.org/10.1088/0268-1242/7/3B/133

Handle: http://hdl.handle.net/2027.42/48930

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