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Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template

dc.contributor.authorYu, Hongboen_US
dc.contributor.authorJung, Taeilen_US
dc.date.accessioned2008-06-04T14:41:27Z
dc.date.available2009-05-04T19:09:20Zen_US
dc.date.issued2008-05en_US
dc.identifier.citationYu, Hongbo; Jung, Taeil (2008). "Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template." physica status solidi c 5(6): 1618-1620. <http://hdl.handle.net/2027.42/58655>en_US
dc.identifier.issn1610-1634en_US
dc.identifier.issn1610-1642en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/58655
dc.description.abstractHigh density self-assembled nanostructured semipolar (NSSP) GaN pyramids are fabricated based on c-plane GaN template by in situ silane treatment followed by high temperature treatment. Semipolar InGaN/GaN multiple quantum wells (MQWs) were subsequently grown on the NSSP GaN. Optical properties of the MQWs were studied by temperature- dependent and excitation density varied photoluminescence. It was found that the internal electric field in the NSSP MQWs were remarkably reduced in comparison with planar c-plane MQWs. The internal quantum efficiency of the NSSP MQWs was measured to be > 30% which showed potential applications in III-nitride light emitters. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)en_US
dc.format.extent215649 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.publisherWILEY-VCH Verlagen_US
dc.subject.otherPhysicsen_US
dc.titleFabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN templateen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelElectrical Engineering and Computer Scienceen_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Av, Ann Arbor, MI 48109-2122, USAen_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Av, Ann Arbor, MI 48109-2122, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/58655/1/1618_ftp.pdf
dc.identifier.doihttp://dx.doi.org/10.1002/pssc.200778541en_US
dc.identifier.sourcephysica status solidi cen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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