RF MEMS technology for millimeter-wave radar sensors

Abstract

The dissertation discusses RF MEMS technology for millimeter-wave radar sensors. RF MEMS, which stands for radio frequency micro-electromechanical system, and radar sensor fundamentals are briefly introduced. Of particular interest are: Firstly, a self-aligned fabrication process for capacitive fixed-fixed beam RF MEMS components is disclosed. It enables scaling of the critical dimensions and reduces the number of processing steps by 40% as compared with a conventional RF MEMS fabrication process. Scaling of the critical dimensions of RF MEMS components offers the potential of submicrosecond T/R switching times. RF MEMS varactors with beam lengths of 30 μm are demonstrated using the self-aligned fabrication process, and the performance of a 4 by 4 RF MEMS varactor bank is discussed as well. At 20 GHz, the measured capacitance values range between 180.5 fF and 199.2 fF. The measured capacitance ratio is 1.15, when a driving voltage of 35 V is applied, and the measured loaded Q factor ranges between 14.5 and 10.8. The measured cold-switched power handling is 200 mW. The simulated switching time is 354.6 ns. Secondly, an analog RF MEMS slotline TTD phase shifter is disclosed, for use in conjunction with ultra wideband (UWB) tapered slot antennas, such as the Vivaldi aerial and the double exponentially tapered slot antenna. It is designed for transistor to transistor logic (TTL) bias voltage levels and exhibits a measured phase shift of 28.2°/dB (7.8 ps/dB) and 59.2°/cm at 10 GHz, maintaining a 75 Ω; differential impedance match (S_{11_dd} ≤ -15.8 dB). The input third-order intercept point (IIP3) is 5 dBm at 10 GHz for a Δf of 50 kHz, measured in a 100 Ω differential transmission line system.