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Modeling Defect Mediated Dopant Diffusion in Silicon.

dc.contributor.authorPuchala, Brian T.en_US
dc.date.accessioned2009-09-03T14:54:24Z
dc.date.availableNO_RESTRICTIONen_US
dc.date.available2009-09-03T14:54:24Z
dc.date.issued2009en_US
dc.date.submitteden_US
dc.identifier.urihttps://hdl.handle.net/2027.42/63835
dc.description.abstractThe current understanding of dopant diffusion in silicon comes from the synthesis of experimental and computational research. Dopant diffusion is mediated by defects, and the relevant physical phenomena range over many time and length scales, necessitating a multi-scale modeling approach. In this work, we focus on two essential aspects, (1) the accuracy of atomistic methods for calculating defect parameters, and (2) an accelerated kinetic Monte Carlo (KMC) method, which we use to investigate the effects of percolating dopant-defect interactions on diffusion. We use continuum linear elasticity to quantify the effects of boundary conditions on atomistic calculations of defect energies and volume tensors. It predicts that when using periodic boundary conditions with zero average stress, energies converge with the inverse of system size and relaxation volume tensors are independent of supercell size or symmetry. We verify the linear elastic prediction in the far field of atomistic calculations by calculating the formation energy and volume tensor for vacancy and interstitial defects in silicon using the Stillinger-Weber empirical potential. In practice, both defect energies and relaxation volume tensors converge with the inverse of system size because changes in the bonding at the defect affect the elastic moduli. We also introduce an accelerated KMC method which automatically determines which states comprise trapping energy basins, allowing simulations to reach very long times compared to standard KMC simulations. We validate the accelerated method by performing simulations of V-As cluster dissolution and comparing to standard KMC simulations. Then we apply the method to highly time and concentration dependent vacancy-mediated As diffusion in Si. At high As concentrations, percolating dopant interactions lead to limited increased diffusivity, but the effect is limited in magnitude and duration as immobile clusters form quickly. The energy basin algorithms for accelerating KMC simulations may be very useful in a wide variety of applications. By considering issues such as grouping isolated diffusing species and collecting data when the exact location of the system within an energy basin is not resolved, we provide an example that can be followed when applying this method to other systems.en_US
dc.format.extent2456756 bytes
dc.format.extent1373 bytes
dc.format.mimetypeapplication/octet-stream
dc.format.mimetypetext/plain
dc.language.isoen_USen_US
dc.subjectDopanten_US
dc.subjectDefecten_US
dc.subjectDiffusionen_US
dc.subjectKinetic Monte Carloen_US
dc.subjectAtomisticen_US
dc.subjectElasticityen_US
dc.titleModeling Defect Mediated Dopant Diffusion in Silicon.en_US
dc.typeThesisen_US
dc.description.thesisdegreenamePhDen_US
dc.description.thesisdegreedisciplineMaterials Science and Engineeringen_US
dc.description.thesisdegreegrantorUniversity of Michigan, Horace H. Rackham School of Graduate Studiesen_US
dc.contributor.committeememberFalk, Michael L.en_US
dc.contributor.committeememberGarikipati, Krishnakumar R.en_US
dc.contributor.committeememberGavini, Vikramen_US
dc.contributor.committeememberGoldman, Rachel S.en_US
dc.contributor.committeememberVan Der Ven, Antonen_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/63835/1/bpuchala_1.pdf
dc.owningcollnameDissertations and Theses (Ph.D. and Master's)


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