Show simple item record

Photoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxes

dc.contributor.authorDavis, L.en_US
dc.contributor.authorKo, Kentonen_US
dc.contributor.authorLi, Wei-Qen_US
dc.contributor.authorSun, H. C.en_US
dc.contributor.authorLam, Yeeloyen_US
dc.contributor.authorBrock, T.en_US
dc.contributor.authorPang, S. W.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorRooks, M. J.en_US
dc.date.accessioned2010-05-06T20:33:11Z
dc.date.available2010-05-06T20:33:11Z
dc.date.issued1993-05-31en_US
dc.identifier.citationDavis, L.; Ko, K. K.; Li, W.‐Q.; Sun, H. C.; Lam, Y.; Brock, T.; Pang, S. W.; Bhattacharya, P. K.; Rooks, M. J. (1993). "Photoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxes." Applied Physics Letters 62(22): 2766-2768. <http://hdl.handle.net/2027.42/69405>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69405
dc.description.abstractThe luminescence and electro‐optic properties of buried 25–35 nm quantum boxes have been measured. The quantum boxes were defined by a combination of molecular beam epitaxial growth and regrowth, electron beam lithography, and dry etching. The photoluminescence from 35 nm boxes shows a blue shift of ∼15 meV compared to the bulk luminescence and an enhancement, taking into account the fill factor. An enhanced effective linear electro‐optic coefficient, rl, is observed for the quantum boxes.en_US
dc.format.extent3102 bytes
dc.format.extent420023 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titlePhotoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationotherNational Nanofabrication Facility, Cornell University, Ithaca, New York 14853en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69405/2/APPLAB-62-22-2766-1.pdf
dc.identifier.doi10.1063/1.109254en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceG. Bryant, Science and Engineering of One- and Zero-Dimensional Semiconductors, edited by S. Beaumont and C. Torres (Plenum, New York, 1990), p. 243.en_US
dc.identifier.citedreferenceG. Bryant, Phys. Rev. B 37, 8763 (1988).en_US
dc.identifier.citedreferenceS. Schmitt-Rink, D. Miller, and D. Chemla, Phys. Rev. B 35, 8113 (1987).en_US
dc.identifier.citedreferenceT. Takagahara, Phys. Rev. B 36, 9293 (1987).en_US
dc.identifier.citedreferenceY. Miyamoto, Y. Miyake, M. Asada, and Y. Suematsu, J. Quantum Electron. 25, 2001 (1989).en_US
dc.identifier.citedreferenceY. Arakawa, 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai (Business Center for Academic Societies, Tokyo, 1990), p. 745.en_US
dc.identifier.citedreferenceA. Forchel, B. E. Maile, H. Leier, G. Mayer, and R. Germann, Science and Engineering of One- and Zero-Dimensional Semiconductors, edited by S. Beaumont and C. Torres (Plenum, New York, 1990), p. 277.en_US
dc.identifier.citedreferenceC. Weisbuch, C. Sotomayor-Torres, and H. Benisty, Nanostructures and Mesoscopic Systems (Academic, San Diego, 1992), p. 471en_US
dc.identifier.citedreferenceP. Wang, C. Sotomayor-Torres, H. Benisty, C. Weisbuch, and S. Beaumont, Appl. Phys. Lett. 61, 946 (1992).en_US
dc.identifier.citedreferenceE. Colas, E. Kapon, S. Simhony, H. Cox, R. Bhat, K. Kash, and P. Lin, Appl. Phys. Lett. 55, 867 (1989).en_US
dc.identifier.citedreferenceY. Nagamune, M. Nishioka, S. Tsukamoto, and Y. Arakawa (to be published).en_US
dc.identifier.citedreferenceT. Takahashi, Y. Arakawa, M. Nishioka, and T. Ikoma, J. Cryst. Growth (to be published).en_US
dc.identifier.citedreferenceI. Tan, R. Mirin, V. Jayaraman, S. Shi, E. Hu, and J. Bowers, Appl. Phys. Lett. 61, 300 (1992).en_US
dc.identifier.citedreferenceH. Temkin, G. Dolan, M. Panish, and S. Chu, Appl. Phys. Lett. 50, 413 (1987).en_US
dc.identifier.citedreferenceT. Aizawa, K. Shimomura, S. Arai, and Y. Suematsu, Photon. Technol. Lett. 3, 907 (1991).en_US
dc.identifier.citedreferenceJ. Patillon, C. Delalande, C. Jay, J. Andre, R. Gamonal, M. Iost, B. Soucail, M. Voos, and G. Martin, 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai (Business Center for Academic Societies, Tokyo, 1990), p. 107.en_US
dc.identifier.citedreferenceS. Pang, Y. Liu, and K. Sung, J. Vac. Sci. Technol. B 9, 3530 (1991).en_US
dc.identifier.citedreferenceD. Biswas, P. R. Berger, U. Das, J. E. Oh, and P. K. Bhattacharya, J. Electron. Mater. 18, 137 (1989).en_US
dc.identifier.citedreferenceA. Yariv and P. Yeh, Optical Waves in Crystals (Wiley, New York, 1984).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.