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C‐V and I‐V characteristics of quantum well varactors
Sun, J. P.; Mains, R. K.; Chen, W. L.; East, J. R.; Haddad, G. I.
1992-09-15
Citation:Sun, J. P.; Mains, R. K.; Chen, W. L.; East, J. R.; Haddad, G. I. (1992). "C‐V and I‐V characteristics of quantum well varactors." Journal of Applied Physics 72(6): 2340-2346. <http://hdl.handle.net/2027.42/69415>
Abstract: A theoretical model for quantum well varactors is presented. The model is used to calculate the device C‐V and I‐V characteristics and very good agreement has been found between the calculated and measured results. Based on the model, a triple barrier double well varactor has been designed and fabricated. A very high capacitance ratio within a very small bias range is achieved, as designed. Details of the design calculations and experimental results are presented.
