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Pulsed supersonic jet epitaxy: A nonthermal approach to silicon growth

dc.contributor.authorMalik, Rajeeven_US
dc.contributor.authorGulari, Erdoganen_US
dc.date.accessioned2010-05-06T20:34:50Z
dc.date.available2010-05-06T20:34:50Z
dc.date.issued1996-05-27en_US
dc.identifier.citationMalik, Rajeev; Gulari, Erdogan (1996). "Pulsed supersonic jet epitaxy: A nonthermal approach to silicon growth." Applied Physics Letters 68(22): 3156-3158. <http://hdl.handle.net/2027.42/69423>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69423
dc.description.abstractIn this letter, we demonstrate a unique approach for low temperature epitaxial growth of single crystal silicon films on Si(100). Pulsed supersonic jet epitaxy (PSJE), employs high kinetic energy jets of a disilane‐hydrogen mixture incident on the surface leading to layer by layer growth. Precise control of film thickness and significantly higher sticking coefficients are demonstrated. Growth rate dependence of pulse frequency and its implications are discussed. We have been able to reproducibly deposit good quality single crystalline films at temperatures as low as 400 °C with this technique, without the use of any external activation. © 1996 American Institute of Physics.en_US
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titlePulsed supersonic jet epitaxy: A nonthermal approach to silicon growthen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Chemical Engineering and Center for Display Technology and Manufacturing, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69423/2/APPLAB-68-22-3156-1.pdf
dc.identifier.doi10.1063/1.115809en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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