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Variation of refractive index in strained InxGa1−xAs‐GaAs heterostructures

dc.contributor.authorDas, Utpalen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T20:43:41Z
dc.date.available2010-05-06T20:43:41Z
dc.date.issued1985-07-01en_US
dc.identifier.citationDas, Utpal; Bhattacharya, Pallab K. (1985). "Variation of refractive index in strained InxGa1−xAs‐GaAs heterostructures." Journal of Applied Physics 58(1): 341-344. <http://hdl.handle.net/2027.42/69520>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69520
dc.description.abstractInxGa1−xAs‐GaAs heterostructures and strained‐layer superlattices can be used as optical waveguides. For such applications it is important to know explicitly the refractive index variation with mismatch strain and with alloying in the ternary layer. Starting from the Kramers‐Kronig integral dispersion relations, we have developed a model from which the refractive index change in the ternary layer of InxGa1−xAs‐GaAs heterojunctions can be calculated. The results are presented and discussed. The expected changes in a superlattice have been qualitatively predicted.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleVariation of refractive index in strained InxGa1−xAs‐GaAs heterostructuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69520/2/JAPIAU-58-1-341-1.pdf
dc.identifier.doi10.1063/1.335682en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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