Zone Leveling and Crystal Growth of Peritectic Compounds

Abstract

Homogeneous samples of peritectic semiconducting compounds have been prepared for optical and electrical characterization by combining zone leveling concepts with Bridgeman crystal growth techniques. Proper temperature distribution in the zone leveling equipment must be established on the basis of the phase diagram for the material, and by considering the rate process accompanying solidification and crystal growth. The ingots produced by this method are substantially uniform and homogeneous in composition, whereas normally frozen or Czochralski‐grown crystals contain concentration gradients.