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Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells

dc.contributor.authorZhou, X.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorHugo, G.en_US
dc.contributor.authorHong, S. C.en_US
dc.contributor.authorGulari, Erdoganen_US
dc.date.accessioned2010-05-06T20:46:07Z
dc.date.available2010-05-06T20:46:07Z
dc.date.issued1989-02-27en_US
dc.identifier.citationZhou, X.; Bhattacharya, P. K.; Hugo, G.; Hong, S. C.; Gulari, E. (1989). "Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells." Applied Physics Letters 54(9): 855-856. <http://hdl.handle.net/2027.42/69546>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69546
dc.description.abstractWe report, for the first time, temperature‐dependent intersubband absorption data in doped pseudomorphic InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. In this composition range the absorption resonance varies in the range 6–7 μm for 50 Å wells, which agrees extremely well with theoretical calculations.en_US
dc.format.extent3102 bytes
dc.format.extent221017 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleIntersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wellsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartments of Electrical Engineering and Computer Science and Chemical Engineering, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69546/2/APPLAB-54-9-855-1.pdf
dc.identifier.doi10.1063/1.100843en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceL. C. West and S. J. Eglash, Appl. Phys. Lett. 46, 1156 (1985).en_US
dc.identifier.citedreferenceB. F. Levine, R. J. Malik, J. Walker, K. K. Choi, C. G. Bethea, D. A. Kleinman, and J. M. Vandenberg, Appl. Phys. Lett. 50, 273 (1987).en_US
dc.identifier.citedreferenceA. Harwit and J. S. Harris, Jr., Appl. Phys. Lett. 50, 685 (1987).en_US
dc.identifier.citedreferenceA. Seilmeier, H. J. Hübner, G. A. Abstreiter, G. Weimann, and W. Schlapp, Phys. Rev. Lett. 59, 1345 (1987).en_US
dc.identifier.citedreferenceB. F. Levine, A. Y. Cho, J. Walker, R. J. Malik, D. A. Kleinman, and D. L. Sivco, Appl. Phys. Lett. 52, 1481 (1988).en_US
dc.identifier.citedreferenceA. Kastalsky, T. Duffield, S. J. Allen, and J. Harbison, Appl. Phys. Lett. 53, 180 (1988).en_US
dc.identifier.citedreferenceN. F. Johnson, H. Ehrenreich, and R. V. Jones, Appl. Phys. Lett. 53, 180 (1988).en_US
dc.identifier.citedreferenceN. Debbar, D. Biswas, P. K. Bhattacharya, and J. Oh, in Proceedings of the Fourteenth International Symposium on Gallium Arsenide and Related Compounds, Atlanta, edited by J. S. Harris (Institute of Physics, London, to be published).en_US
dc.owningcollnamePhysics, Department of


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