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Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation

dc.contributor.authorUrsaki, V. V.en_US
dc.contributor.authorTiginyanu, I. M.en_US
dc.contributor.authorRicci, P. C.en_US
dc.contributor.authorAnedda, A.en_US
dc.contributor.authorHubbard, Seth M.en_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.date.accessioned2010-05-06T20:49:26Z
dc.date.available2010-05-06T20:49:26Z
dc.date.issued2003-09-15en_US
dc.identifier.citationUrsaki, V. V.; Tiginyanu, I. M.; Ricci, P. C.; Anedda, A.; Hubbard, S.; Pavlidis, D. (2003). "Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation." Journal of Applied Physics 94(6): 3875-3882. <http://hdl.handle.net/2027.42/69582>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69582
dc.description.abstractPersistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) were investigated in a variety of n-GaN layers characterized by different carrier concentrations, luminescence characteristics, and strains. The relation between PPC and OQ of PC was studied by exciting the samples with two beams of monochromatic radiation of various wavelengths and intensities. The PPC was found to be excited by the first beam with a threshold at 2.0 eV, while the second beam induces OQ of PC in a wide range of photon energies with a threshold at 1.0 eV. The obtained results are explained on the basis of a model combining two previously put forward schemes with electron traps playing the main role in PPC and hole traps inducing OQ of PC. The possible nature of the defects responsible for optical metastability of GaN is discussed. © 2003 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titlePersistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitationen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumEECS Department, The University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherLaboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Technical University of Moldova, Bd. Stefan cel Mare 168, Chisinau 2004, Moldovaen_US
dc.contributor.affiliationotherDipartimento di Fisica, Università di Cagliari and INFM, UdR Cagliari, Cittadella Universitaria S.P. No. 8, Km 0.700, 09042 Monserrato (Ca), Italyen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69582/2/JAPIAU-94-6-3875-1.pdf
dc.identifier.doi10.1063/1.1604950en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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