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Low‐loss, single‐mode In0.53Ga0.47As/In0.52Al0.48As/InP optical waveguides fabricated by Zn‐induced impurity‐induced layer disordering

dc.contributor.authorLai, Richard K.en_US
dc.contributor.authorPamulapati, Jagadeeshen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorBaird, R. J.en_US
dc.date.accessioned2010-05-06T20:51:22Z
dc.date.available2010-05-06T20:51:22Z
dc.date.issued1991-11-01en_US
dc.identifier.citationLai, R.; Pamulapati, J.; Bhattacharya, P. K.; Baird, R. J. (1991). "Low‐loss, single‐mode In0.53Ga0.47As/In0.52Al0.48As/InP optical waveguides fabricated by Zn‐induced impurity‐induced layer disordering." Journal of Applied Physics 70(9): 5136-5137. <http://hdl.handle.net/2027.42/69603>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69603
dc.description.abstractWe have investigated the properties of Zn diffusion in the In0.53Ga0.47As/In0.52Al0.48As superlattice and have made optical guides delineated by Zn‐induced layer disordering in the multilayers. Measurements on the single‐mode waveguides show loses as low as 2.3 dB/cm including coupling loss.en_US
dc.format.extent3102 bytes
dc.format.extent233524 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLow‐loss, single‐mode In0.53Ga0.47As/In0.52Al0.48As/InP optical waveguides fabricated by Zn‐induced impurity‐induced layer disorderingen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2212en_US
dc.contributor.affiliationumAnalytical Sciences Department, Research Staff, Ford Motor Company, P. O. Box 2053, Dearborn, Michigan 48121‐2053en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69603/2/JAPIAU-70-9-5136-1.pdf
dc.identifier.doi10.1063/1.348989en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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