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Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature

dc.contributor.authorBrown, A. S.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorSingh, J.en_US
dc.contributor.authorZaman, P.en_US
dc.contributor.authorSen, S.en_US
dc.contributor.authorTurco, F.en_US
dc.date.accessioned2010-05-06T21:01:55Z
dc.date.available2010-05-06T21:01:55Z
dc.date.issued1996-01-08en_US
dc.identifier.citationBrown, A. S.; Bhattacharya, P.; Singh, J.; Zaman, P.; Sen, S.; Turco, F. (1996). "Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature." Applied Physics Letters 68(2): 220-222. <http://hdl.handle.net/2027.42/69717>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69717
dc.description.abstractWe have observed a degradation in the epitaxial layer quality of AlInAs when it is grown by molecular beam epitaxy at a substrate temperature of about 400 °C compared to that for alloys grown at 300 and 500 °C. The barrier height and ideality factor of Ti– and Au–AlInAs Schottky diodes also exhibit large spatial variations and dependence on growth temperatures. The observed phenomena can be explained by invoking a kinetic growth model or thermodynamic phase equilibria in the growing surface layer. © 1996 American Institute of Physics.en_US
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dc.format.extent139185 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleDependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperatureen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical and Computer Engineering, University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationotherSchool of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332‐0250en_US
dc.contributor.affiliationotherDepartment of Electronic Science, University of Calcutta 92, Acharya P. C. Roy Road, Calcutta 700009, Indiaen_US
dc.contributor.affiliationotherBellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701‐7020en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69717/2/APPLAB-68-2-220-1.pdf
dc.identifier.doi10.1063/1.116466en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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