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Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy

dc.contributor.authorGhosh, S.en_US
dc.contributor.authorKochman, Boazen_US
dc.contributor.authorSingh, J.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:03:38Z
dc.date.available2010-05-06T21:03:38Z
dc.date.issued2000-05-01en_US
dc.identifier.citationGhosh, S.; Kochman, B.; Singh, J.; Bhattacharya, P. (2000). "Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy." Applied Physics Letters 76(18): 2571-2573. <http://hdl.handle.net/2027.42/69734>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69734
dc.description.abstractThe heterostructure conduction band offset, ΔEc,ΔEc, in InAs/GaAs self-organized quantum dots has been measured by deep level transient spectroscopy. Measurements were made with Au–Al0.18Ga0.82AsAu–Al0.18Ga0.82As Schottky diodes in which the multilayer dots are embedded in the ternary layer. The estimated value of the band offset ΔEc = 341±30 meV.ΔEc=341±30meV. © 2000 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent123764 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleConduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopyen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69734/2/APPLAB-76-18-2571-1.pdf
dc.identifier.doi10.1063/1.126411en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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