Ionization Rates in (AlxGa1−x)As
dc.contributor.author | Shabde, S. N. | en_US |
dc.contributor.author | Yeh, C. | en_US |
dc.date.accessioned | 2010-05-06T21:05:45Z | |
dc.date.available | 2010-05-06T21:05:45Z | |
dc.date.issued | 1970-10 | en_US |
dc.identifier.citation | Shabde, S. N.; Yeh, C. (1970). "Ionization Rates in (AlxGa1−x)As." Journal of Applied Physics 41(11): 4743-4744. <http://hdl.handle.net/2027.42/69753> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69753 | |
dc.description.abstract | The ionization rates of (AlxGa1−x) As have been measured as a function of the Al content and the results are presented here. Values of both A and b are found to increase with Al content. It is also found that for low values of Al content, the ionization rates of (AlxGa1−x) As are consistent with Baraff's theory. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 140760 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Ionization Rates in (AlxGa1−x)As | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Electron Physics Laboratory, Department of Electrical Engineering, The University of Michigan, Ann Arbor, Michigan 48104 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69753/2/JAPIAU-41-11-4743-1.pdf | |
dc.identifier.doi | 10.1063/1.1658526 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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