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Self-organized In0.4Ga0.6AsIn0.4Ga0.6As quantum-dot lasers grown on Si substrates

dc.contributor.authorLinder, Kojo K.en_US
dc.contributor.authorPhillips, J.en_US
dc.contributor.authorQasaimeh, Omaren_US
dc.contributor.authorLiu, X. F.en_US
dc.contributor.authorKrishna, Sanjayen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorJiang, J. C.en_US
dc.date.accessioned2010-05-06T21:22:05Z
dc.date.available2010-05-06T21:22:05Z
dc.date.issued1999-03-08en_US
dc.identifier.citationLinder, K. K.; Phillips, J.; Qasaimeh, O.; Liu, X. F.; Krishna, S.; Bhattacharya, P.; Jiang, J. C. (1999). "Self-organized In0.4Ga0.6AsIn0.4Ga0.6As quantum-dot lasers grown on Si substrates." Applied Physics Letters 74(10): 1355-1357. <http://hdl.handle.net/2027.42/69929>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69929
dc.description.abstractWe report growth of self-organized In0.4Ga0.6AsIn0.4Ga0.6As quantum dots on Si substrates by molecular-beam epitaxy. Low-temperature (17 K) photoluminescence spectra show that the optical properties of In0.4Ga0.6AsIn0.4Ga0.6As quantum dots grown on Si are comparable to quantum dots grown on GaAs substrates. We also present preliminary characteristics of In0.4Ga0.6AsIn0.4Ga0.6As quantum-dot lasers grown on Si substrates. Light versus current measurements at 80 K under pulsed bias conditions show that Ith=3.85 kA/cm2.Ith=3.85kA/cm2. The lasing spectral output has a peak emission wavelength of 1.013 μm and a linewidth (full width at half maximum) of ∼4 Å at the threshold. © 1999 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSelf-organized In0.4Ga0.6AsIn0.4Ga0.6As quantum-dot lasers grown on Si substratesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69929/2/APPLAB-74-10-1355-1.pdf
dc.identifier.doi10.1063/1.123548en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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