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In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures

dc.contributor.authorJaffe, Marken_US
dc.contributor.authorOh, J. E.en_US
dc.contributor.authorPamulapati, Jagadeeshen_US
dc.contributor.authorSingh, J.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:32:53Z
dc.date.available2010-05-06T21:32:53Z
dc.date.issued1989-06-05en_US
dc.identifier.citationJaffe, M.; Oh, J. E.; Pamulapati, J.; Singh, J.; Bhattacharya, P. (1989). "In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures." Applied Physics Letters 54(23): 2345-2346. <http://hdl.handle.net/2027.42/70045>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70045
dc.description.abstractWe have determined the strain dependence of the in‐plane hole effective mass in pseudomorphic Inx Ga1−x As/Al0.15 Ga0.85As modulation‐doped heterostructures by low‐temperature Shubnikov–de Haas measurements. An effective mass equal to 0.18m0 is measured for x=0.2. The measured values are in good agreement with theoretical calculations.en_US
dc.format.extent3102 bytes
dc.format.extent217416 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleIn‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High Frequency Microelectronics and Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70045/2/APPLAB-54-23-2345-1.pdf
dc.identifier.doi10.1063/1.101121en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceG. Osbourn, J. Schirber, T. Drummond, L. Dawson, B. Doyle, and I. Fritz, Appl. Phys. Lett. 49, 731 (1986).en_US
dc.identifier.citedreferenceM. Jaffe, Y. Sekiguchi, J. East, and J. Singh, Superlatt. Microstruct. 4, 395 (1988).en_US
dc.identifier.citedreferenceI. Fritz, J. Schirber, E. Jones, T. Drummond, and G. Osbourn, Inst. Phys. Conf. Ser. 83, 233 (1986).en_US
dc.identifier.citedreferenceT. E. Zipperian, L. R. Dawson, T. J. Drummond, J. E. Schirber, and I. J. Fritz, Appl. Phys. Lett. 52, 975 (1988).en_US
dc.identifier.citedreferenceD. A. Broido and L. J. Sham, Phys. Rev. B 31, 888 (1985).en_US
dc.owningcollnamePhysics, Department of


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