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Inhomogeneous broadening of intersubband transitions due to nonscreening roughness of heterointerfaces

dc.contributor.authorVasko, F. T.en_US
dc.contributor.authorSun, J. P.en_US
dc.contributor.authorHaddad, George I.en_US
dc.contributor.authorMitin, V. V.en_US
dc.date.accessioned2010-05-06T21:35:19Z
dc.date.available2010-05-06T21:35:19Z
dc.date.issued2000-04-01en_US
dc.identifier.citationVasko, F. T.; Sun, J. P.; Haddad, G. I.; Mitin, V. V. (2000). "Inhomogeneous broadening of intersubband transitions due to nonscreening roughness of heterointerfaces." Journal of Applied Physics 87(7): 3582-3584. <http://hdl.handle.net/2027.42/70071>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70071
dc.description.abstractThe shape of the terahertz absorption peak in quantum wells with rough heterointerfaces is studied. Although the long-range variations of the ground level are screened in heavily doped structures, the intersubband in-plane energy remains nonuniform due to the second-level variations. The equation for intersubband polarization is considered in the resonant approximation, taking into account the depolarization shift. The line shape of the intersubband absorption peak is described for the case with long-range variations of heterointerfaces. © 2000 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent59632 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleInhomogeneous broadening of intersubband transitions due to nonscreening roughness of heterointerfacesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationumDepartment of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202en_US
dc.contributor.affiliationotherInstitute of Semiconductor Physics, Kiev, 252650, Ukraineen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70071/2/JAPIAU-87-7-3582-1.pdf
dc.identifier.doi10.1063/1.372386en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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