Dynamic characteristics of high-speed In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature

Abstract

We have measured the room-temperature modulation characteristics of self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dot lasers in which electrons are injected into the dot lasing states by tunneling. A small-signal modulation bandwidth of f−3 dB = 22 GHzf−3dB=22GHz is measured. Values of differential gain at 288 K of dg/dn ≅ 8.85×10−14 cm2dg/dn≅8.85×10−14cm2 and gain compression factor ε = 7.2×10−16 cm3ε=7.2×10−16cm3 are derived from the modulation data. Extremely low values of linewidth enhancement factor α ∼ 1α∼1 and chirp <0.6 Å were also measured in the devices. © 2002 American Institute of Physics.