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Effect of alloy clustering on the high‐temperature electron mobility in In1−xGaxAsyP1−y

dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorKu, Joseph W.en_US
dc.date.accessioned2010-05-06T21:41:26Z
dc.date.available2010-05-06T21:41:26Z
dc.date.issued1985-08-01en_US
dc.identifier.citationBhattacharya, Pallab K.; Ku, Joseph W. (1985). "Effect of alloy clustering on the high‐temperature electron mobility in In1−xGaxAsyP1−y." Journal of Applied Physics 58(3): 1410-1411. <http://hdl.handle.net/2027.42/70137>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70137
dc.description.abstractHall measurements on liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to InP have been performed in the temperature range 300≤T(K)≤600 °C. The crystals were grown at 640 °C. Anomalous lowering of the mobility and carrier concentration has been observed at these temperatures for certain alloy compositions. It is believed that clustering due to miscibility gaps existing in these solid compositions is responsible for the observed data. Interpretations of the data based on this assumption have been made.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEffect of alloy clustering on the high‐temperature electron mobility in In1−xGaxAsyP1−yen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherHewlett–Packard Company, Integrated Circuits Division, Cupertino, California 95104en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70137/2/JAPIAU-58-3-1410-1.pdf
dc.identifier.doi10.1063/1.336092en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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