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Microstructure and crystal defects in epitaxial ZnOZnO film grown on GaGa modified (0001) sapphire surface

dc.contributor.authorSun, H. P.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.contributor.authorDu, X. L.en_US
dc.contributor.authorMei, Z. X.en_US
dc.contributor.authorZeng, Z. Q.en_US
dc.contributor.authorXue, Q. K.en_US
dc.date.accessioned2010-05-06T21:44:36Z
dc.date.available2010-05-06T21:44:36Z
dc.date.issued2004-11-08en_US
dc.identifier.citationSun, H. P.; Pan, X. Q.; Du, X. L.; Mei, Z. X.; Zeng, Z. Q.; Xue, Q. K. (2004). "Microstructure and crystal defects in epitaxial ZnOZnO film grown on GaGa modified (0001) sapphire surface." Applied Physics Letters 85(19): 4385-4387. <http://hdl.handle.net/2027.42/70171>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70171
dc.description.abstractSurface modification of sapphire (0001) by GaGa can eliminate multiple rotation domains in ZnOZnO films. The existence of GaGa at ZnOZnO∕sapphire interface was confirmed by x-ray energy dispersive spectroscopy in a transmission electron microscope. Atomic detail of mismatch dislocations at interface was imaged by high resolution transmission electron microscopy. Inside the ZnOZnO film, there is a high density of stacking fault. Both pure gliding of ZnO (0001)ZnO (0001) plane and condensation of vacancies or interstatials are possible mechanisms to generate the stacking fault.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMicrostructure and crystal defects in epitaxial ZnOZnO film grown on GaGa modified (0001) sapphire surfaceen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136en_US
dc.contributor.affiliationotherState Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100081, People’s Republic of Chinaen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70171/2/APPLAB-85-19-4385-1.pdf
dc.identifier.doi10.1063/1.1811393en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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