Characterization of surface structure in sputtered Al films: Correlation to microstructure evolution
dc.contributor.author | Lita, Adriana E. | en_US |
dc.contributor.author | Sanchez, John E. | en_US |
dc.date.accessioned | 2010-05-06T21:44:42Z | |
dc.date.available | 2010-05-06T21:44:42Z | |
dc.date.issued | 1999-01-15 | en_US |
dc.identifier.citation | Lita, Adriana E.; Sanchez, John E. (1999). "Characterization of surface structure in sputtered Al films: Correlation to microstructure evolution." Journal of Applied Physics 85(2): 876-882. <http://hdl.handle.net/2027.42/70172> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70172 | |
dc.description.abstract | Quantitative roughness and microstructural analysis of as-deposited Al films, 0.1–1.0 μm thick, were performed by atomic force microscopy (AFM), one-dimensional power spectral density analysis (1DPSD), transmission electron microscopy, and x-ray pole figure methods. The variation of grain size (d) with thickness (h) in the columnar grained film was d∝h0.9.d∝h0.9. The initial crystallographic texture was nearly random, with a strong Al (111) fiber texture evolving by ≈0.2 μm in deposited thickness. AFM imaging revealed a surface structure with hillocks, grains, and grain boundary grooves, and periodic within-grain ridges extending over entire grains. The root-mean-square surface height variation (RRMS)(RRMS) initially decreased during deposition but increased as RRMS∝h0.55RRMS∝h0.55 from 0.3 to 1.0 μm thickness. The 1DPSD analysis revealed three spatially resolved regimes of roughness evolution; a frequency independent regime at low frequency attributed to hillock growth, an intermediate frequency self-similar regime attributed to grains and grain boundary grooves, and a high frequency self-similar regime attributed to within-grain ridges. Two characteristic dimensions (CD) were defined at the inverse frequencies of transition between each 1DPSD roughness regime. CDICDI at high frequency was identified as the peak-to-peak ridge spacing which remained independent of film thickness. The ridge spacing is proposed to represent the upper limit of an effective surface diffusion length (λ0)(λ0) due to the effects of surface diffusion and flux shadowing. The CDIICDII at lower frequency was identified as the grain size which increased with thickness. The evolution and interactions of roughness and microstructural features are discussed in terms of surface diffusion, grain boundary motion, and flux shadowing mechanisms. © 1999 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 328258 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Characterization of surface structure in sputtered Al films: Correlation to microstructure evolution | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70172/2/JAPIAU-85-2-876-1.pdf | |
dc.identifier.doi | 10.1063/1.369206 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | S. Vaidya and A. K. Sinha, Thin Solid Films THSFAP75, 253 (1981). | en_US |
dc.identifier.citedreference | D. J. Srolovitz, A. Mazor, and B. G. Bukiet, J. Vac. Sci. Technol. A JVTAD66, 2371 (1988). | en_US |
dc.identifier.citedreference | G. S. Bales and A. Zangwill, J. Vac. Sci. Technol. A JVTAD69, 145 (1991). | en_US |
dc.identifier.citedreference | C. Eisenmenger-Sittner, A. Bergauer, and H. Bangert, J. Appl. Phys. JAPIAU78, 4899 (1995). | en_US |
dc.identifier.citedreference | B. A. Movchan and A. V. Demchishin, Fiz. Met. Metalloved. FMMTAK28, 653 (1969). | en_US |
dc.identifier.citedreference | J. A. Thornton, Annu. Rev. Mater. Sci. ARMSCX7, 239 (1977). | en_US |
dc.identifier.citedreference | C. R. M. Grovenor, H. T. G. Hentzell, and D. A. Smith, Acta Metall. AMETAR32, 773 (1984). | en_US |
dc.identifier.citedreference | E. Grantscharova, Thin Solid Films THSFAP224, 28 (1993). | en_US |
dc.identifier.citedreference | M. J. Verkerk and W. Brankaert, Thin Solid Films THSFAP135, 77 (1986). | en_US |
dc.identifier.citedreference | A. Barabasi and H. E. Stanley, Fractal Concepts in Surface Growth (Cambridge University Press, Cambridge, 1995). | en_US |
dc.identifier.citedreference | J. M. Elson and J. M. Bennett, Appl. Opt. APOPAI34, 201 (1995). | en_US |
dc.identifier.citedreference | J. E. Sanchez, Jr., A. Lita, and C. Wauchope (unpublished). | en_US |
dc.identifier.citedreference | K. L. Westra and D. J. Thomson, J. Vac. Sci. Technol. B JVTBD913, 344 (1995). | en_US |
dc.identifier.citedreference | C. V. Thompson, J. Appl. Phys. JAPIAU58, 763 (1985). | en_US |
dc.identifier.citedreference | S. Roberts and P. J. Dobson, Thin Solid Films THSFAP135, 137 (1986). | en_US |
dc.identifier.citedreference | R. Stumpf and M. Scheffler, Phys. Rev. Lett. PRLTAO72, 254 (1994). | en_US |
dc.identifier.citedreference | S. M. Sze, VLSI Technology (McGraw–Hill, New York, 1983), p. 69. | en_US |
dc.identifier.citedreference | W. W. Mullins, J. Appl. Phys. JAPIAU28, 333 (1957). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.