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Low‐temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor deposition

dc.contributor.authorLudowise, M. J.en_US
dc.contributor.authorBiswas, Dipankaren_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:47:48Z
dc.date.available2010-05-06T21:47:48Z
dc.date.issued1990-03-05en_US
dc.identifier.citationLudowise, M. J.; Biswas, D.; Bhattacharya, P. K. (1990). "Low‐temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor deposition." Applied Physics Letters 56(10): 958-960. <http://hdl.handle.net/2027.42/70205>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70205
dc.description.abstractGa1−x Inx As1−y Py /InP (x=0.72, y=0.39) lattice‐matched quantum wells (QWs) are grown by low‐pressure metalorganic chemical vapor deposition on (100) and 3° misoriented substrates, using different variations of growth technique. Low‐temperature (10 K) photoluminescence is used to characterize the QWs. We find that substrates oriented closely to (100) (no intentional misorientation) produce QWs of consistently higher quality as judged by the width of the n=1 photoluminescence peak. The use of growth interruptions at the well interfaces severely degrades the QW quality. The narrowest peak observed is 5.8 meV wide from a 70‐Å‐wide well.en_US
dc.format.extent3102 bytes
dc.format.extent403835 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLow‐temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationotherHewlett–Packard Laboratories, 3500 Deer Creek Road, Palo Alto, California 94304en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70205/2/APPLAB-56-10-958-1.pdf
dc.identifier.doi10.1063/1.102591en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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