High‐field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation‐ doped heterostructures at 300 and 77 K

Yang, D.; Bhattacharya, Pallab K.; Hong, W. P.; Bhat, R.; Hayes, J. R.

High‐field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation‐ doped heterostructures at 300 and 77 K

dc.contributor.author	Yang, D.	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.contributor.author	Hong, W. P.	en_US
dc.contributor.author	Bhat, R.	en_US
dc.contributor.author	Hayes, J. R.	en_US
dc.date.accessioned	2010-05-06T21:50:37Z
dc.date.available	2010-05-06T21:50:37Z
dc.date.issued	1992-07-01	en_US
dc.identifier.citation	Yang, D.; Bhattacharya, P. K.; Hong, W. P.; Bhat, R.; Hayes, J. R. (1992). "High‐field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation‐ doped heterostructures at 300 and 77 K." Journal of Applied Physics 72(1): 174-178. <http://hdl.handle.net/2027.42/70235>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/70235
dc.description.abstract	We have measured the high‐field transport characteristics of pseudomorphic InAsxP1−x/InP (0.3≤x≤1.0) modulation doped heterostructures at 300 and 77 K. The field dependent steady state average velocities increase steadily with increase in x. The maximum velocities that have been measured in InAs/InP are 1.7×107 cm/s (2.5 kV/cm) and 3.2×107 cm/s (2.2 kV/cm) at 300 and 77 K, respectively. These are the highest velocities measured in any modulation doped heterostructure. The field dependent channel carrier concentration and mobility data indicate that there is very little real space transfer of carriers at high fields and this is confirmed by results from steady state Monte Carlo calculations.	en_US
dc.format.extent	3102 bytes
dc.format.extent	564843 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	High‐field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation‐ doped heterostructures at 300 and 77 K	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory, Department of Electrical Engineering & Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122	en_US
dc.contributor.affiliationother	Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/70235/2/JAPIAU-72-1-174-1.pdf
dc.identifier.doi	10.1063/1.352154	en_US
dc.identifier.source	Journal of Applied Physics	en_US
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dc.owningcollname	Physics, Department of

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