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Second order Raman spectroscopy of the wurtzite form of GaN

dc.contributor.authorMurugkar, S.en_US
dc.contributor.authorMerlin, R.en_US
dc.contributor.authorBotchkarev, A.en_US
dc.contributor.authorSalvador, A.en_US
dc.contributor.authorMorkoç, H.en_US
dc.date.accessioned2010-05-06T21:51:51Z
dc.date.available2010-05-06T21:51:51Z
dc.date.issued1995-06-01en_US
dc.identifier.citationMurugkar, S.; Merlin, R.; Botchkarev, A.; Salvador, A.; Morkoç, H. (1995). "Second order Raman spectroscopy of the wurtzite form of GaN." Journal of Applied Physics 77(11): 6042-6043. <http://hdl.handle.net/2027.42/70248>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70248
dc.description.abstractWe report on Raman scattering by phonon pairs in GaN films grown on sapphire substrates by plasma‐enhanced molecular beam epitaxy. The first order data are consistent with results obtained from GaN bulk crystals of the wurtzite structure. The A1 and the much weaker E2 symmetry components of the second order scattering have been identified. Two‐phonon spectra are dominated by contributions due to longitudinal optical phonons. © 1995 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent258641 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSecond order Raman spectroscopy of the wurtzite form of GaNen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumThe Harrison M. Randall Laboratory of Physics, The University of Michigan, Ann Arbor, Michigan 48109‐1120en_US
dc.contributor.affiliationotherMaterials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70248/2/JAPIAU-77-11-6042-1.pdf
dc.identifier.doi10.1063/1.359190en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.identifier.citedreferenceS. Murugkar, A. Salvador, H. Morkoç, and R. Merlin (unpublished).en_US
dc.owningcollnamePhysics, Department of


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