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GaAs junction field effect transitors for low‐temperature environments

dc.contributor.authorForrest, S. R.en_US
dc.contributor.authorSanders, T. M.en_US
dc.date.accessioned2010-05-06T22:03:46Z
dc.date.available2010-05-06T22:03:46Z
dc.date.issued1978-11en_US
dc.identifier.citationForrest, S. R.; Sanders, T. M. (1978). "GaAs junction field effect transitors for low‐temperature environments." Review of Scientific Instruments 49(11): 1603-1604. <http://hdl.handle.net/2027.42/70375>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70375
dc.identifier.urihttp://www.ncbi.nlm.nih.gov/sites/entrez?cmd=retrieve&db=pubmed&list_uids=18699015&dopt=citationen_US
dc.description.abstractThermal, electrical, and noise characteristics of a GaAs junction FET are described. Low voltage noise [1.5±0.2 nV/(Hz)1/2 at T =4.2 K] and insensitivity to temperature change in the range 1.3⩽T ⩽300 K make it suitable for low‐temperature applications.en_US
dc.format.extent3102 bytes
dc.format.extent167352 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleGaAs junction field effect transitors for low‐temperature environmentsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumRandall Laboratory of Physics, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.identifier.pmid18699015en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70375/2/RSINAK-49-11-1603-1.pdf
dc.identifier.doi10.1063/1.1135322en_US
dc.identifier.sourceReview of Scientific Instrumentsen_US
dc.identifier.citedreferenceB. Lengeler, Cryogenics 14, 439 (1974).en_US
dc.identifier.citedreferenceJFETs are type GAT 1∕010, Plessey Optoelectronics and Microwave, Irvine, CA.en_US
dc.identifier.citedreferenceThis may indicate some changes in the device since the work described in Ref. 1.en_US
dc.identifier.citedreferenceThe noise of the devices was measured for device dissipation of about 10 mW. It is possible that under these conditions channel temperature is above ambient.en_US
dc.identifier.citedreferenceD. A. Elliot, Solid‐State Electron. 14, 1041 (1971).en_US
dc.identifier.citedreferenceJ. W. Haslett and E. J. M. Kendall, IEEE Trans. Electron Dev. ED‐19, 943 (1972).en_US
dc.identifier.citedreferenceR. R. Wagner, P. T. Anderson, and B. Bertman, Rev. Sci. Instrum. 41, 917 (1970).en_US
dc.owningcollnamePhysics, Department of


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