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Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

dc.contributor.authorHashizume, Tamotsuen_US
dc.contributor.authorAlekseev, Egoren_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.contributor.authorBoutros, Karim S.en_US
dc.contributor.authorRedwing, Joanen_US
dc.date.accessioned2010-05-06T22:03:52Z
dc.date.available2010-05-06T22:03:52Z
dc.date.issued2000-08-15en_US
dc.identifier.citationHashizume, Tamotsu; Alekseev, Egor; Pavlidis, Dimitris; Boutros, Karim S.; Redwing, Joan (2000). "Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition." Journal of Applied Physics 88(4): 1983-1986. <http://hdl.handle.net/2027.42/70376>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70376
dc.description.abstractElectrical characterization of AlN/GaN interfaces was carried out by the capacitance–voltage (C–V)(C–V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C–VC–V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C21/C2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density DitDit of 1×1011 cm−2 eV−11×1011 cm−2 eV−1 or less around the energy position of Ec−0.8 eVEc−0.8 eV was demonstrated, in agreement with an average DitDit value estimated from photoassisted C–VC–V characteristics. © 2000 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent63527 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleCapacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherEpitronics/ATMI, 21002 N. 19th Avenue, Suite 5, Phoenix, Arizona 85027en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70376/2/JAPIAU-88-4-1983-1.pdf
dc.identifier.doi10.1063/1.1303722en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.identifier.citedreferenceB. J. Trew, M. W. Shin, and V. Gatto, Solid-State Electron. SSELA541, 1561 (1997).en_US
dc.identifier.citedreferenceN. A. Khan, J. N. Kuznia, A. Bhattarai, and D. T. Olsen, Appl. Phys. Lett. APPLAB62, 1214 (1993).en_US
dc.identifier.citedreferenceA. T. Ping, Q. Chen, J. W. Yang, M. A. Khan, and I. Adesida, IEEE Electron Device Lett. EDLEDZ19, 54 (1998).en_US
dc.identifier.citedreferenceY.-F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. EDLEDZ19, 50 (1998).en_US
dc.identifier.citedreferenceG. J. Sullivan, J. A. Higgins, M. Y. Chen, J. W. Yang, Q. Chen, R. L. Pierson, and B. T. McDermott, Electron. Lett. ELLEAK34, 922 (1998).en_US
dc.identifier.citedreferenceH. C. Casey, Jr., G. G. Fountain, R. G. Alley, B. P. Keller, and S. P. DenBaars, Appl. Phys. Lett. APPLAB68, 1850 (1996).en_US
dc.identifier.citedreferenceM. Sawada, T. Sawada, Y. Yamagata, K. Imai, H. Kumura, M. Yoshino, K. Iizuka, and H. Tomozawa, Proceedings of the 2nd International Conference on Nitride Semiconductors, Tokushima, Japan, 1997, p. 482.en_US
dc.identifier.citedreferenceS. Arulkumaran, T. Egawa, M. Ishikawa, T. Jimbo, and M. Umeno, Appl. Phys. Lett. APPLAB73, 809 (1998).en_US
dc.identifier.citedreferenceH. Kawai, M. Hara, F. Nakamura, and S. Imanaga, Electron. Lett. ELLEAK34, 592 (1998).en_US
dc.identifier.citedreferenceP. Neudeck, S. Kang, J. Petit, and M. Tabib-Azar, J. Appl. Phys. JAPIAU75, 7949 (1994).en_US
dc.identifier.citedreferenceJ. Tan, M. K. Das, J. A. Cooper, Jr., and M. R. Melloch, Appl. Phys. Lett. APPLAB70, 2280 (1997).en_US
dc.identifier.citedreferenceC.-M. Zetterling, M. T. Ling, K. Wongchotigul, M. G. Spencer, X. Tang, C. I. Harris, N. Nordell, and S. S. Wong, J. Appl. Phys. JAPIAU82, 2990 (1997).en_US
dc.identifier.citedreferenceY. Wang, J. A. Cooper, Jr., M. R. Melloch, S. T. Aheppard, J. W. Palmour, and L. A. Lipkin, J. Electron. Mater. JECMA525, 899 (1996).en_US
dc.identifier.citedreferenceE. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), Chap. 8.en_US
dc.identifier.citedreferenceJ. N. Shenoy, G. L. Chindalore, M. R. Melloch, J. A. Cooper, Jr., J. W. Palmour, and K. G. Irvine, J. Electron. Mater. JECMA524, 303 (1996).en_US
dc.identifier.citedreferenceS. W. King, C. Ronning, R. F. Davis, M. C. Benjamin, and R. J. Nemanich, J. Appl. Phys. JAPIAU84, 2086 (1998).en_US
dc.owningcollnamePhysics, Department of


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