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Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

dc.contributor.authorHashizume, Tamotsuen_US
dc.contributor.authorAlekseev, Egoren_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.contributor.authorBoutros, Karim S.en_US
dc.contributor.authorRedwing, Joanen_US
dc.date.accessioned2010-05-06T22:03:52Z
dc.date.available2010-05-06T22:03:52Z
dc.date.issued2000-08-15en_US
dc.identifier.citationHashizume, Tamotsu; Alekseev, Egor; Pavlidis, Dimitris; Boutros, Karim S.; Redwing, Joan (2000). "Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition." Journal of Applied Physics 88(4): 1983-1986. <http://hdl.handle.net/2027.42/70376>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70376
dc.description.abstractElectrical characterization of AlN/GaN interfaces was carried out by the capacitance–voltage (C–V)(C–V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C–VC–V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C21/C2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density DitDit of 1×1011 cm−2 eV−11×1011 cm−2 eV−1 or less around the energy position of Ec−0.8 eVEc−0.8 eV was demonstrated, in agreement with an average DitDit value estimated from photoassisted C–VC–V characteristics. © 2000 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent63527 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleCapacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherEpitronics/ATMI, 21002 N. 19th Avenue, Suite 5, Phoenix, Arizona 85027en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70376/2/JAPIAU-88-4-1983-1.pdf
dc.identifier.doi10.1063/1.1303722en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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