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Monte Carlo studies of ohmic hole mobility in silicon and germanium: Examination of the optical phonon deformation potential

dc.contributor.authorHinckley, John M.en_US
dc.contributor.authorSingh, J.en_US
dc.date.accessioned2010-05-06T22:04:31Z
dc.date.available2010-05-06T22:04:31Z
dc.date.issued1994-10-01en_US
dc.identifier.citationHinckley, J. M.; Singh, J. (1994). "Monte Carlo studies of ohmic hole mobility in silicon and germanium: Examination of the optical phonon deformation potential." Journal of Applied Physics 76(7): 4192-4200. <http://hdl.handle.net/2027.42/70383>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70383
dc.description.abstractMonte Carlo methods which have been widely used for studying high field electron and hole transport, so far have not been applied to the complex problem of Ohmic hole transport. We present a versatile generalization of the Monte Carlo approach for Ohmic hole mobility studies and apply it to pure silicon and germanium. In particular, we examine the role of the optical phonon deformation potential d0 in controlling the temperature dependence of the mobility.en_US
dc.format.extent3102 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMonte Carlo studies of ohmic hole mobility in silicon and germanium: Examination of the optical phonon deformation potentialen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70383/2/JAPIAU-76-7-4192-1.pdf
dc.identifier.doi10.1063/1.357373en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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