GaAs‐based multiple quantum well tunneling injection lasers

Abstract

We report the modulation characteristics of multiple quantum well tunneling injection lasers designed for 0.98 μm emission wavelength. Electrons are injected into the active region through a single barrier via tunneling. The active region has four quantum wells with different well widths. Improved high frequency performance, compared to similar separate confinement heterostructure lasers, has been demonstrated. The modulation response at 21 GHz is above 0 dB and the extrapolated −3 dB modulation bandwidth is ∼30 GHz under pulsed bias. © 1996 American Institute of Physics.