Login
Home
→
Research Collections
→
Physics, Department of
→
View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display
Hong, Yongtaek; Nahm, Jeong-Yeop; Kanicki, Jerzy
2003-10-20
Citation:
Hong, Yongtaek; Nahm, Jeong-Yeop; Kanicki, Jerzy (2003). "Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display." Applied Physics Letters 83(16): 3233-3235. <http://hdl.handle.net/2027.42/70464>
Abstract:
We report on opto-electrical properties of a current-driven 200 dpi active-matrix organic polymer red light-emitting display (AM–PLED) based on four hydrogenated amorphous silicon thin-film transistor pixel electrode circuits. The AM–PLED luminance and effective light-emission efficiency were 30 cd/m230cd/m2 and 0.3 cd/A, respectively, at the data current equal to 25 mA. The display electroluminescent spectrum has a peak located at and the full width at half maximum value of 644 and 95 nm, respectively, and Commission Internationale de l’Eclairage color coordinates of (0.66,0.33). © 2003 American Institute of Physics.
DOIs:
10.1063/1.1617372
Handle:
http://hdl.handle.net/2027.42/70464
Show full item record
Download
Name:
APPLAB-83-16-32 ...
Size:
218.1KB
Format:
PDF
This item appears in the following Collection(s)
Physics, Department of
Interdisciplinary and Peer-Reviewed
Search Deep Blue
Search query
Advanced Search
Browse by
Communities & Collections
Titles
Authors
Subjects
Date
My Account
Login
Information
About Deep Blue
Help
Contact Us