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Highly anisotropic crystal growth and thermoelectric properties of K2Bi8−xSbxSe13K2Bi8−xSbxSe13 solid solutions: Band gap anomaly at low x
Kyratsi, Theodora; Dyck, Jeffrey S.; Chen, Wei; Chung, Duck-Young; Uher, Ctirad; Paraskevopoulos, Konstantinos M.; Kanatzidis, Mercouri G.
2002-07-15
Citation:
Kyratsi, Theodora; Dyck, Jeffrey S.; Chen, Wei; Chung, Duck-Young; Uher, Ctirad; Paraskevopoulos, Konstantinos M.; Kanatzidis, Mercouri G. (2002). "Highly anisotropic crystal growth and thermoelectric properties of K2Bi8−xSbxSe13K2Bi8−xSbxSe13 solid solutions: Band gap anomaly at low x." Journal of Applied Physics 92(2): 965-975. <http://hdl.handle.net/2027.42/70515>
Abstract:
The thermoelectric properties of solid solutions of the type β-K2Bi8−xSbxSe13β-K2Bi8−xSbxSe13 (0<x<8)(0<x<8) were studied with respect to thermal behavior, band gap variation, and charge transport properties as a function of x. At x values between 0 and 1.5, the energy band gap is observed to decrease (anomalous) before it widens with increasing x values as would be expected. For selected members of the solid solutions, the Bridgman technique was applied to obtain well-grown oriented ingots that were used to measure the thermal conductivity and charge transport properties in different growth directions. The measurements showed a strong anisotropy in thermoelectric properties with the largest anisotropy observed in the electrical conductivity. Lattice thermal conductivities of the selected solid solutions were observed to decrease when the x value increases. Preliminary doping studies on the x=1.6x=1.6 member were carried out and it was shown that it is possible to significantly increase the power factor. © 2002 American Institute of Physics.
DOIs:
10.1063/1.1481967
Handle:
http://hdl.handle.net/2027.42/70515
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