Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dots
dc.contributor.author | Qasaimeh, Omar | en_US |
dc.contributor.author | Kamath, Kishore K. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Phillips, J. | en_US |
dc.date.accessioned | 2010-05-06T22:19:48Z | |
dc.date.available | 2010-05-06T22:19:48Z | |
dc.date.issued | 1998-03-16 | en_US |
dc.identifier.citation | Qasaimeh, O.; Kamath, K.; Bhattacharya, P.; Phillips, J. (1998). "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dots." Applied Physics Letters 72(11): 1275-1277. <http://hdl.handle.net/2027.42/70545> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70545 | |
dc.description.abstract | The electro-optic properties of self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dots have been studied experimentally. Single-mode ridge waveguide structures were grown by molecular beam epitaxy with self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dots in the guiding region. The measured linear and quadratic electro-optic coefficients are 2.58×10−112.58×10−11 m/V and 6.25×10−17 m2/V2,6.25×10−17m2/V2, respectively, which are much higher than those obtained for bulk GaAs or quantum well structures. The measured transmission characteristics indicate that low-voltage amplitude modulators can be realized with quantum dot active regions. © 1998 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 60468 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dots | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70545/2/APPLAB-72-11-1275-1.pdf | |
dc.identifier.doi | 10.1063/1.121049 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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