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Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes

dc.contributor.authorDas, Utpalen_US
dc.contributor.authorZebda, Yousefen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2010-05-06T22:26:49Z
dc.date.available2010-05-06T22:26:49Z
dc.date.issued1987-10-12en_US
dc.identifier.citationDas, Utpal; Zebda, Yousef; Bhattacharya, Pallab; Chin, Albert (1987). "Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes." Applied Physics Letters 51(15): 1164-1166. <http://hdl.handle.net/2027.42/70619>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70619
dc.description.abstractThe properties of In0.24Ga0.76As/GaAs and GaAs/In0.05Ga0.58Al0.37As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times ∼60–100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5–10 nA at 10 V are ∼0.4 A/W, which correspond to peak external quantum efficiencies of ∼60%. These results indicate that very high performance photodiodes can be realized with strained layers.en_US
dc.format.extent3102 bytes
dc.format.extent371489 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titlePerformance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory and Center for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70619/2/APPLAB-51-15-1164-1.pdf
dc.identifier.doi10.1063/1.98720en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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