High-carrier-density electron dynamics in low-temperature-grown GaAs
Sosnowski, T. S.; Norris, T. B.; Wang, H. H.; Grenier, P.; Whitaker, J. F.; Sung, C. Y.
1997-06-16
Citation: Sosnowski, T. S.; Norris, T. B.; Wang, H. H.; Grenier, P.; Whitaker, J. F.; Sung, C. Y. (1997). "High-carrier-density electron dynamics in low-temperature-grown GaAs." Applied Physics Letters 70(24): 3245-3247. <http://hdl.handle.net/2027.42/70634>
Abstract: Pump-probe differential transmission measurements examine high-carrier-density phenomena in as-grown and annealed GaAs samples grown at temperatures from 210 to 270 °C. We observe trap saturation and Auger recombination, and accurately model the measurements on annealed samples with a simple two level rate equation, allowing us to extract the trapped-electron lifetimes. © 1997 American Institute of Physics.
DOIs: 10.1063/1.119138
Handle: http://hdl.handle.net/2027.42/70634
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