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Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications

dc.contributor.authorGebretsadik, H.en_US
dc.contributor.authorKamath, Kishore K.en_US
dc.contributor.authorZhou, W. -D.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorCaneau, C.en_US
dc.contributor.authorBhat, R.en_US
dc.date.accessioned2010-05-06T22:31:33Z
dc.date.available2010-05-06T22:31:33Z
dc.date.issued1998-01-12en_US
dc.identifier.citationGebretsadik, H.; Kamath, K.; Zhou, W.-D.; Bhattacharya, P.; Caneau, C.; Bhat, R. (1998). "Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications." Applied Physics Letters 72(2): 135-137. <http://hdl.handle.net/2027.42/70669>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70669
dc.description.abstractWe have studied the wet thermal oxidation of In0.52Al0.48AsIn0.52Al0.48As and its potential application in current and optical confinement in vertical cavity surface emitting lasers (VCSELs). Two types of InP-based heterostructures were used to study the effect of adjacent layer compositions on the lateral oxidation behavior of the InAlAs. It was found that the oxidation of In0.52Al0.48AsIn0.52Al0.48As with InP adjacent layers, compared with In0.53Ga0.47AsIn0.53Ga0.47As adjacent layers, proceeded faster, more uniformly and with minimal degradation of the surrounding layers making it ideal for optoelectronic applications. © 1998 American Institute of Physics.en_US
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dc.format.extent77959 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applicationsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherBellcore, Redbank, New Jersey 01701-5699en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70669/2/APPLAB-72-2-135-1.pdf
dc.identifier.doi10.1063/1.121443en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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