A kinetic Monte Carlo method for the atomic-scale simulation of chemical vapor deposition: Application to diamond
dc.contributor.author | Battaile, Corbett C. | en_US |
dc.contributor.author | Srolovitz, David J. | en_US |
dc.contributor.author | Butler, J. E. | en_US |
dc.date.accessioned | 2010-05-06T22:39:13Z | |
dc.date.available | 2010-05-06T22:39:13Z | |
dc.date.issued | 1997-12-15 | en_US |
dc.identifier.citation | Battaile, C. C.; Srolovitz, D. J.; Butler, J. E. (1997). "A kinetic Monte Carlo method for the atomic-scale simulation of chemical vapor deposition: Application to diamond." Journal of Applied Physics 82(12): 6293-6300. <http://hdl.handle.net/2027.42/70750> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70750 | |
dc.description.abstract | We present a method for simulating the chemical vapor deposition (CVD) of thin films. The model is based upon a three-dimensional representation of film growth on the atomic scale that incorporates the effects of surface atomic structure and morphology. Film growth is simulated on lattice. The temporal evolution of the film during growth is examined on the atomic scale by a Monte Carlo technique parameterized by the rates of the important surface chemical reactions. The approach is similar to the N-fold way in that one reaction occurs at each simulation step, and the time increment between reaction events is variable. As an example of the application of the simulation technique, the growth of {111}-oriented diamond films was simulated for fifteen substrate temperatures ranging from 800 to 1500 K. Film growth rates and incorporated vacancy and H atom concentrations were computed at each temperature. Under typical CVD conditions, the simulated growth rates vary from about 0.1 to 0.8 μm/hr between 800 and 1500 K and the activation energy for growth on the {111}: H surface between 800 and 1100 K is 11.3 kcal/mol. The simulations predict that the concentrations of incorporated point defects are low at substrate temperatures below 1300 K, but become significant above this temperature. If the ratio between growth rate and point defect concentration is used as a measure of growth efficiency, ideal substrate temperatures for the growth of {111}-oriented diamond films are in the vicinity of 1100 to 1200 K. © 1997 American Institute of Physics. | en_US |
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dc.format.extent | 559561 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | A kinetic Monte Carlo method for the atomic-scale simulation of chemical vapor deposition: Application to diamond | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationother | Gas/Surface Dynamics Section, Code 6174, Naval Research Laboratory, Washington, D.C. 20375 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70750/2/JAPIAU-82-12-6293-1.pdf | |
dc.identifier.doi | 10.1063/1.366532 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | R. C. DeVries, Annu. Rev. Mater. Sci. ARMSCX17, 161 (1987). | en_US |
dc.identifier.citedreference | K. E. Spear, J. Am. Ceram. Soc. JACTAW72, 171 (1989). | en_US |
dc.identifier.citedreference | F. G. Celii and J. E. Butler, Annu. Rev. Phys. Chem. ARPLAP42, 643 (1991). | en_US |
dc.identifier.citedreference | J. E. Butler and R. L. Woodin, Philos. Trans. R. Soc. London, Ser. A PTRMAD342, 209 (1993). | en_US |
dc.identifier.citedreference | D. G. Goodwin and J. E. Butler, in Handbook of Industrial Diamonds and Diamond Films, edited by M. A. Prelas, G. Popovici, and L. K. Bigelow (Dekker, New York, 1997), pp. 527–582. | en_US |
dc.identifier.citedreference | F. G. Celii, P. E. Pehrsson, H.-t. Wang, and J. E. Butler, Appl. Phys. Lett. APPLAB54, 2043 (1988). | en_US |
dc.identifier.citedreference | C.-H. Wu, M. A. Tamor, T. J. Potter, and E. W. Kaiser, J. Appl. Phys. JAPIAU68, 4825 (1990). | en_US |
dc.identifier.citedreference | W. L. Hsu, Appl. Phys. Lett. APPLAB59, 1427 (1991). | en_US |
dc.identifier.citedreference | D. W. Brenner, Phys. Rev. B PRBMDO42, 9458 (1990). | en_US |
dc.identifier.citedreference | B. J. Garrison, E. J. Dawnkaski, D. Srivastava, and D. W. Brenner, Science SCIEAS255, 835 (1992). | en_US |
dc.identifier.citedreference | D. Huang and M. Frenklach, J. Phys. Chem. JPCHAX96, 1868 (1992). | en_US |
dc.identifier.citedreference | V. I. Gavrilenko, Phys. Rev. B PRBMDO47, 9556 (1993). | en_US |
dc.identifier.citedreference | Y. L. Yang and M. P. D’Evelyn, J. Am. Chem. Soc. JACSAT114, 2796 (1992). | en_US |
dc.identifier.citedreference | T. Frauenheim, U. Stephan, P. Blaudeck, D. Porezag, H.-G. Busmann, W. Zimmermann-Edling, and S. Lauer, Phys. Rev. B PRBMDO48, 18189 (1993). | en_US |
dc.identifier.citedreference | Z. Jing and J. L. Whitten, Surf. Sci. SUSCAS314, 300 (1994). | en_US |
dc.identifier.citedreference | S. Skokov, C. S. Carmer, B. Weiner, and M. Frenklach, Phys. Rev. B PRBMDO49, 5662 (1994). | en_US |
dc.identifier.citedreference | S. Ciraci and I. P. Batra, Phys. Rev. B PLRBAQ15, 3254 (1977). | en_US |
dc.identifier.citedreference | S. H. Yang, D. A. Drabold, and J. B. Adams, Phys. Rev. B PRBMDO48, 5261 (1993). | en_US |
dc.identifier.citedreference | B. N. Davidson and W. E. Pickett, Phys. Rev. B PRBMDO49, 11253 (1994). | en_US |
dc.identifier.citedreference | M. Frenklach and H. Wang, Phys. Rev. B PRBMDO43, 1520 (1991). | en_US |
dc.identifier.citedreference | S. J. Harris and D. G. Goodwin, J. Phys. Chem. JPCHAX97, 23 (1993). | en_US |
dc.identifier.citedreference | M. E. Coltrin and D. S. Dandy, J. Appl. Phys. JAPIAU74, 5803 (1993). | en_US |
dc.identifier.citedreference | D. S. Dandy and M. E. Coltrin, J. Mater. Res. JMREEE10, 1993 (1995). | en_US |
dc.identifier.citedreference | M. O. Kaukonen and R. M. Nieminen, Surf. Sci. SUSCAS331–3, 975 (1995). | en_US |
dc.identifier.citedreference | E. J. Dawnkaski, D. Srivastava, and B. J. Garrison, J. Chem. Phys. JCPSA6104, 5997 (1996). | en_US |
dc.identifier.citedreference | M. M. Clark, L. M. Raff, and H. L. Scott, Comput. Phys. CPHYE210, 584 (1996). | en_US |
dc.identifier.citedreference | C. C. Battaile, D. J. Srolovitz, and J. E. Butler, Diamond Relat. Mater. (in press). | en_US |
dc.identifier.citedreference | A. B. Bortz, M. H. Kalos, and J. L. Lebowitz, J. Comp. Physiol. JRCPA317, 10 (1975). | en_US |
dc.identifier.citedreference | G. N. Hassold and E. A. Holm, Comput. Phys. CPHYE27, 97 (1993). | en_US |
dc.identifier.citedreference | K. A. Fichthorn and W. H. Weinberg, J. Chem. Phys. JCPSA695, 1090 (1991). | en_US |
dc.identifier.citedreference | R. Locher, C. Wild, N. Herres, D. Behr, and P. Koidl, Appl. Phys. Lett. APPLAB65, 34 (1994). | en_US |
dc.identifier.citedreference | J. S. Kim and M. A. Cappelli, J. Mater. Res. JMREEE10, 149 (1995). | en_US |
dc.identifier.citedreference | R. E. Rawles, W. G. Morris, and M. P. D’Evelyn, in Diamond for Electronic Applications, Boston, MA, edited by D. L. Dreifus, A. Collins, T. Humphreys, K. Das, and P. E. Pehrsson, Mater. Res. Soc. Symp. Proc. MRSPDH416 (Materials Research Society, Pittsburgh, 1996), pp. 13–18. | en_US |
dc.identifier.citedreference | Y. L. Yang, L. M. Struck, L. F. Sutcu, and M. P. D’Evelyn, Thin Solid Films THSFAP225, 203 (1993). | en_US |
dc.identifier.citedreference | B. D. Thoms, J. N. Russell, Jr., P. E. Pehrsson, and J. E. Butler, J. Chem. Phys. JCPSA6100, 8425 (1994). | en_US |
dc.identifier.citedreference | D. D. Koleske, S. M. Gates, B. D. Thoms, J. N. Russell, Jr., and J. E. Butler, J. Chem. Phys. JCPSA6102, 992 (1995). | en_US |
dc.identifier.citedreference | S. J. Harris and D. N. Belton, Jpn. J. Appl. Phys., Part I JAPNDE30, 2615 (1991). | en_US |
dc.identifier.citedreference | S. Skokov, B. Weiner, and M. Frenklach, J. Phys. Chem. JPCHAX99, 5616 (1995). | en_US |
dc.identifier.citedreference | N. Metropolis, A. W. Rosenbluth, M. N. Rosenbluth, A. H. Teller, and E. Teller, J. Chem. Phys. JCPSA621, 1087 (1953). | en_US |
dc.identifier.citedreference | S. J. Harris, Appl. Phys. Lett. APPLAB56, 2298 (1990). | en_US |
dc.identifier.citedreference | B. D. Thoms, M. S. Owens, J. E. Butler, and C. Sprio, Appl. Phys. Lett. APPLAB65, 2957 (1994). | en_US |
dc.identifier.citedreference | B. D. Thoms and J. E. Butler, Surf. Sci. SUSCAS328, 291 (1995). | en_US |
dc.identifier.citedreference | S. J. Harris and A. M. Weiner, Appl. Phys. Lett. APPLAB53, 1605 (1988). | en_US |
dc.identifier.citedreference | S. J. Harris and A. M. Weiner, J. Appl. Phys. JAPIAU67, 6520 (1990). | en_US |
dc.identifier.citedreference | F. G. Celii and J. E. Butler, J. Appl. Phys. JAPIAU71, 2877 (1992). | en_US |
dc.identifier.citedreference | D. S. Dandy and M. E. Coltrin, J. Appl. Phys. JAPIAU76, 3102 (1994). | en_US |
dc.identifier.citedreference | C. J. Chu, R. H. Hauge, J. L. Margrave, and M. P. D’Evelyn, Appl. Phys. Lett. APPLAB61, 1393 (1992). | en_US |
dc.identifier.citedreference | C. Battaile, D. J. Srolovitz, and J. E. Butler, in Thin Films: Surface and Morphology, Boston, MA, edited by R. Cammarata, E. Chason, T. Einstein, , and E. Williams, Mater. Res. Soc. Symp. Proc. MRSPDH441 (Materials Research Society, Pittsburgh, 1997), pp. 509–514. | en_US |
dc.owningcollname | Physics, Department of |
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