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Structural and electrical properties of c-axis epitaxial homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m=3,(m=3, 4, 5, and 6) thin films
dc.contributor.authorZhang, S. T.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorSun, H. P.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.contributor.authorTan, W. S.en_US
dc.contributor.authorLiu, Zhi-Guoen_US
dc.contributor.authorMing, N. B.en_US
dc.date.accessioned2010-05-06T22:41:19Z
dc.date.available2010-05-06T22:41:19Z
dc.date.issued2003-07-01en_US
dc.identifier.citationZhang, S. T.; Chen, Y. F.; Sun, H. P.; Pan, X. Q.; Tan, W. S.; Liu, Z. G.; Ming, N. B. (2003). "Structural and electrical properties of c-axis epitaxial homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m=3,(m=3, 4, 5, and 6) thin films." Journal of Applied Physics 94(1): 544-550. <http://hdl.handle.net/2027.42/70772>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70772
dc.description.abstractc-axis epitaxial thin films of Bi-layered homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m=3,(m=3, 4, 5, and 6) were fabricated on (001) SrTiO3SrTiO3 single crystal substrates by pulsed laser deposition, respectively. Microstructures of the films were systematically characterized by x-ray diffraction (including θ–2θ scans, rocking curve scans and ϕ scans), atomic force microscopy, and transmission electron microscope. Epitaxial relations were established to be (001)Srm−3Bi4TimO3m+3∥(001)SrTiO3(001)Srm−3Bi4TimO3m+3∥(001)SrTiO3 and [10]Srm−3Bi4TimO3m+3∥[010]SrTiO3[11̄0]Srm−3Bi4TimO3m+3∥[010]SrTiO3 by ϕ scans and selected area diffraction. A special kind of atomic shift along the [001] direction and a slight atomic vibration of TiO6TiO6 octahedra were revealed and discussed. The room-temperature dielectric constants of these epitaxial films measured by using an evanescent microwave probe were 245±23,245±23, 237±13,237±13, 272±19,272±19, and 221±20221±20 for films with m=3,m=3, 4, 5, and 6 respectively. © 2003 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleStructural and electrical properties of c-axis epitaxial homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m=3,(m=3, 4, 5, and 6) thin filmsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherNational Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of Chinaen_US
dc.contributor.affiliationotherNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of Chinaen_US
dc.contributor.affiliationotherNational Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of Chinaen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70772/2/JAPIAU-94-1-544-1.pdf
dc.identifier.doi10.1063/1.1579864en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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