Adsorption-controlled growth of Bi4Ti3O12Bi4Ti3O12 by reactive MBE
dc.contributor.author | Theis, Chris D. | en_US |
dc.contributor.author | Yeh, J. | en_US |
dc.contributor.author | Schlom, Darrell G. | en_US |
dc.contributor.author | Hawley, M. E. | en_US |
dc.contributor.author | Brown, G. W. | en_US |
dc.contributor.author | Jiang, J. C. | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.date.accessioned | 2010-05-06T22:49:33Z | |
dc.date.available | 2010-05-06T22:49:33Z | |
dc.date.issued | 1998-06-01 | en_US |
dc.identifier.citation | Theis, C. D.; Yeh, J.; Schlom, D. G.; Hawley, M. E.; Brown, G. W.; Jiang, J. C.; Pan, X. Q. (1998). "Adsorption-controlled growth of Bi4Ti3O12Bi4Ti3O12 by reactive MBE." Applied Physics Letters 72(22): 2817-2819. <http://hdl.handle.net/2027.42/70859> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70859 | |
dc.description.abstract | Adsorption-controlled conditions have been identified and utilized to grow epitaxial bismuth titanate thin films by reactive molecular beam epitaxy. Growth of stoichiometric, phase pure, cc-axis oriented, epitaxial films is achieved by supplying a large overabundance of bismuth and ozone continuously to the surface of the depositing film. Titanium is supplied to the film in the form of shuttered bursts each containing a three monolayer dose of titanium to grow one formula unit of Bi4Ti3O12.Bi4Ti3O12. It is seen from measured film thickness, Rutherford backscattering spectrometry composition measurements, monitoring of reflection high-energy electron diffraction half-order intensity oscillations during growth, and in situ flux measurements using atomic absorption spectroscopy that at suitable temperature and ozone background pressure, the titanium sticking coefficient approaches one and the excess bismuth desorbs from the surface. Film growth proceeds by the formation of mounds whose step heights are predominantly integral multiples of a half-unit cell.© 1998 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 349931 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Adsorption-controlled growth of Bi4Ti3O12Bi4Ti3O12 by reactive MBE | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | University of Michigan, Department of Materials Science and Engineering, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationother | Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802-5005 | en_US |
dc.contributor.affiliationother | Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70859/2/APPLAB-72-22-2817-1.pdf | |
dc.identifier.doi | 10.1063/1.121468 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.identifier.citedreference | Bi4Ti3O12Bi4Ti3O12 is monoclinic with space group B1a1B1a1 as shown by A. D. Rae, J. G. Thompson, R. L. Withers, and A. C. Willis, Acta Crystallogr. Sect. B: Struct. Sci. ASBSDK46, 474 (1990). | en_US |
dc.identifier.citedreference | C. A-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) NATUAS374, 627 (1995). | en_US |
dc.identifier.citedreference | W. J. Takei, N. P. Formigoni, and M. H. Francombe, Appl. Phys. Lett. APPLAB15, 256 (1969). | en_US |
dc.identifier.citedreference | R. Ramesh, A. Inam, W. K. Chan, B. Wilkens, K. Myers, K. Remschnig, D. L. Hart, and J. M. Tarascon, Science SCIEAS252, 944 (1991). | en_US |
dc.identifier.citedreference | S. Choopun, T. Matsumoto, and T. Kawai, Appl. Phys. Lett. APPLAB67, 1072 (1995). | en_US |
dc.identifier.citedreference | EPI, Chorus Corporation, St. Paul, MN. | en_US |
dc.identifier.citedreference | C. D. Theis and D. G. Schlom, J. Cryst. Growth JCRGAE174, 473 (1997). | en_US |
dc.identifier.citedreference | M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchiya, M. Shinohara, O. Isiyama, T. Yonezawa, M. Yoshimoto, and H. Koinuma, Science SCIEAS266, 1540 (1994). | en_US |
dc.identifier.citedreference | M. de Keijser and G. J. M. Dormans, MRS Bull. MRSBEA37 (1996). | en_US |
dc.identifier.citedreference | J. R. Arthur, J. Appl. Phys. JAPIAU39, 4032 (1968). | en_US |
dc.identifier.citedreference | I. Barin, Thermochemical Data of Pure Substances, 3rd. ed. (VCH Publishers, Inc., New York, 1995). | en_US |
dc.identifier.citedreference | S. Watanabe, T. Hikita, and Maki Kawai, J. Vac. Sci. Technol. A JVTAD69, 2394 (1991). | en_US |
dc.identifier.citedreference | L. N. Sidorov, I. I. Minayeva, E. Z. Zasorin, I. D. Sorokin, and A. Ya. Borshchevskiy, High. Temp. Sci. HITSAC12, 175 (1980). | en_US |
dc.identifier.citedreference | I. M. Reaney, M. Roulin, H. S. Shulman, and N. Setter, Ferroelectrics FEROA8165, 295 (1995). | en_US |
dc.identifier.citedreference | S. Migita, Y. Kasai, H. Ota, and S. Sakai, Appl. Phys. Lett. APPLAB71, 3712 (1997). | en_US |
dc.identifier.citedreference | C. Gerber, D. Anselmetti, J. G. Bednorz, J. Mannhart, and D. G. Schlom, Nature (London) NATUAS350, 279 (1991). | en_US |
dc.identifier.citedreference | M. Hawley, I. D. Raistrick, J. G. Beery, and R. J. Houlton, Science SCIEAS251, 1587 (1991). | en_US |
dc.identifier.citedreference | G. Ehrlich and F. G. Hudda, J. Chem. Phys. JCPSA644, 1039 (1966). | en_US |
dc.identifier.citedreference | R. L. Schwoebel and E. J. Shipsey, J. Appl. Phys. JAPIAU37, 3682 (1966). | en_US |
dc.owningcollname | Physics, Department of |
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