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Enhanced annealing kinetics in ion‐implanted InxAl1−xAs studied by x‐ray diffractometry

dc.contributor.authorClarke, Royen_US
dc.contributor.authorDos Passos, Waldemaren_US
dc.contributor.authorChan, Yi‐jenen_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.date.accessioned2010-05-06T22:54:28Z
dc.date.available2010-05-06T22:54:28Z
dc.date.issued1991-05-20en_US
dc.identifier.citationClarke, Roy; Dos Passos, Waldemar; Chan, Yi‐Jen; Pavlidis, Dimitris (1991). "Enhanced annealing kinetics in ion‐implanted InxAl1−xAs studied by x‐ray diffractometry." Applied Physics Letters 58(20): 2267-2269. <http://hdl.handle.net/2027.42/70911>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70911
dc.description.abstractWe report a rapid thermal annealing (RTA) enhancement of the structural coherence of Si‐implanted InxAl1−xAs (x≊0.54) layers on (100)InP. Under these annealing conditions (750 °C for 30 s), the enhancement occurs only in implanted samples and is characterized by the appearance of pendellösung fringes in double‐crystal x‐ray diffraction. Measurements of the parallel (ϵ∥) and perpendicular (ϵ⊥) lattice mismatch show a slight relaxation in ϵ⊥ during RTA without significant generation of dislocations (ϵ∥=0). The results suggest an electronic mechanism for the increased efficiency of RTA in implanted samples.en_US
dc.format.extent3102 bytes
dc.format.extent352267 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEnhanced annealing kinetics in ion‐implanted InxAl1−xAs studied by x‐ray diffractometryen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70911/2/APPLAB-58-20-2267-1.pdf
dc.identifier.doi10.1063/1.104895en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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