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Small‐signal modulation and temperature dependence of the tunneling injection laser

dc.contributor.authorDavis, L.en_US
dc.contributor.authorSun, H. C.en_US
dc.contributor.authorYoon, H.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T22:58:30Z
dc.date.available2010-05-06T22:58:30Z
dc.date.issued1994-06-13en_US
dc.identifier.citationDavis, L.; Sun, H. C.; Yoon, H.; Bhattacharya, P. K. (1994). "Small‐signal modulation and temperature dependence of the tunneling injection laser." Applied Physics Letters 64(24): 3222-3224. <http://hdl.handle.net/2027.42/70954>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70954
dc.description.abstractRecently, we demonstrated a novel laser structure, called the tunneling injection laser, where the electrons are injected into the active lasing quantum well region via tunneling. High performance results for this device have now been demonstrated. A To of 160 K was found from temperature‐dependent measurements (25–70 °C). High differential gain (5.5×10−16 cm2) and modulation bandwidth (12.5 GHz) have been attained relative to other single quantum well lasers.en_US
dc.format.extent3102 bytes
dc.format.extent360671 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSmall‐signal modulation and temperature dependence of the tunneling injection laseren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70954/2/APPLAB-64-24-3222-1.pdf
dc.identifier.doi10.1063/1.111342en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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